High-temperature (T≥470K) pulsed operation of 5.5 μm quantum cascade lasers with high-reflection coating

N. Ulbrich; G. Scarpa; A. Sigl; J. Roßkopf; G. Böhm; G. Abstreiter; M. C. Amann

doi:10.1049/el:20010892

High-temperature (T≥470K) pulsed operation of 5.5 μm quantum cascade lasers with high-reflection coating

N. Ulbrich, G. Scarpa, A. Sigl, J. Roßkopf, G. Böhm, G. Abstreiter, M. C. Amann

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

High-temperature pulsed operation of strain-compensated quantum cascade lasers with high-reflection coating on cleaved laser facets was demonstrated. A solid-source molecular beam epitaxy (MBE) system was used for the growth of quantum cascade lasers on a low n-doped InP substrate. The HR coatings were designed for an emission emission wavelength of 5.6μm to account for the increase in emission wavelength at elevated temperatures. The demonstration revealed an increase in the operation temperature from 440 K to 470 K and a subsequent decrease in threshold current density from 8.1 to 6.5 kA/cm².

Original language	English
Pages (from-to)	1341-1342
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	22
DOIs	https://doi.org/10.1049/el:20010892
State	Published - 25 Oct 2001

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title = "High-temperature (T≥470K) pulsed operation of 5.5 μm quantum cascade lasers with high-reflection coating",

abstract = "High-temperature pulsed operation of strain-compensated quantum cascade lasers with high-reflection coating on cleaved laser facets was demonstrated. A solid-source molecular beam epitaxy (MBE) system was used for the growth of quantum cascade lasers on a low n-doped InP substrate. The HR coatings were designed for an emission emission wavelength of 5.6μm to account for the increase in emission wavelength at elevated temperatures. The demonstration revealed an increase in the operation temperature from 440 K to 470 K and a subsequent decrease in threshold current density from 8.1 to 6.5 kA/cm2.",

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T1 - High-temperature (T≥470K) pulsed operation of 5.5 μm quantum cascade lasers with high-reflection coating

AU - Ulbrich, N.

AU - Scarpa, G.

AU - Sigl, A.

AU - Roßkopf, J.

AU - Böhm, G.

AU - Abstreiter, G.

AU - Amann, M. C.

PY - 2001/10/25

Y1 - 2001/10/25

N2 - High-temperature pulsed operation of strain-compensated quantum cascade lasers with high-reflection coating on cleaved laser facets was demonstrated. A solid-source molecular beam epitaxy (MBE) system was used for the growth of quantum cascade lasers on a low n-doped InP substrate. The HR coatings were designed for an emission emission wavelength of 5.6μm to account for the increase in emission wavelength at elevated temperatures. The demonstration revealed an increase in the operation temperature from 440 K to 470 K and a subsequent decrease in threshold current density from 8.1 to 6.5 kA/cm2.

AB - High-temperature pulsed operation of strain-compensated quantum cascade lasers with high-reflection coating on cleaved laser facets was demonstrated. A solid-source molecular beam epitaxy (MBE) system was used for the growth of quantum cascade lasers on a low n-doped InP substrate. The HR coatings were designed for an emission emission wavelength of 5.6μm to account for the increase in emission wavelength at elevated temperatures. The demonstration revealed an increase in the operation temperature from 440 K to 470 K and a subsequent decrease in threshold current density from 8.1 to 6.5 kA/cm2.

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U2 - 10.1049/el:20010892

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VL - 37

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EP - 1342

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

High-temperature (T≥470K) pulsed operation of 5.5 μm quantum cascade lasers with high-reflection coating

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