TY - GEN
T1 - High-temperature superconducting resonator-stabilized coplanar hybrid-integrated oscillator at 6.5 GHz
AU - Klieber, R.
AU - Ramisch, R.
AU - Weigel, R.
AU - Schwab, M.
AU - Dill, R.
AU - Valenzuela, A. A.
AU - Russer, P.
N1 - Publisher Copyright:
© 1991 IEEE.
PY - 1991
Y1 - 1991
N2 - A small-size coplanar oscillator has been designed and entirely fabricated on a 10-mm 10-mm2 LaAlO3 substrate in superconducting microwave integrated circuit (SMIC) technology. As an active element, a GaAs MESFET has been used. The oscillator is stabilized by a coplanar waveguide transmission line resonator patterned from a YBa2Cu3O7-x film onto the LaAlO3 substrate. The oscillator, operating at 77 K, is characterized by a center frequency of 6.5 GHz and a power output of nearly 5 dBm. A single-sideband phase noise to carrier ratio of -90 dBc/Hz at 10-kHz offset has been attained. The attenuation of harmonics is better than 10 dBc.
AB - A small-size coplanar oscillator has been designed and entirely fabricated on a 10-mm 10-mm2 LaAlO3 substrate in superconducting microwave integrated circuit (SMIC) technology. As an active element, a GaAs MESFET has been used. The oscillator is stabilized by a coplanar waveguide transmission line resonator patterned from a YBa2Cu3O7-x film onto the LaAlO3 substrate. The oscillator, operating at 77 K, is characterized by a center frequency of 6.5 GHz and a power output of nearly 5 dBm. A single-sideband phase noise to carrier ratio of -90 dBc/Hz at 10-kHz offset has been attained. The attenuation of harmonics is better than 10 dBc.
KW - High temperature superconductors
KW - Integrated circuit technology
KW - Microwave integrated circuits
KW - Microwave oscillators
KW - Microwave technology
KW - Substrates
KW - Superconducting films
KW - Superconducting integrated circuits
KW - Superconducting microwave devices
KW - Superconducting transmission lines
UR - http://www.scopus.com/inward/record.url?scp=84913162684&partnerID=8YFLogxK
U2 - 10.1109/IEDM.1991.235275
DO - 10.1109/IEDM.1991.235275
M3 - Conference contribution
AN - SCOPUS:84913162684
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 923
EP - 926
BT - International Electron Devices Meeting 1991, IEDM 1991
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Electron Devices Meeting, IEDM 1991
Y2 - 8 December 1991 through 11 December 1991
ER -