High-temperature performance of InGaAs-InGaA1As-InP 1.79-μm diode lasers grown in solid-source molecular-beam epitaxy

G. K. Kuang, G. Böhm, N. Graf, M. Grau, G. Rösel, R. Meyer, M. C. Amann

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

1.79-μm InGaAs-InGaAlAs strained-layer quantum-well diode lasers have been fabricated. A characteristic temperature of 72 K has been achieved. At a temperature as high as 100 °C, a continuous-wave output power of more than 6.5 mW per facet has been demonstrated with lasers using as-cleaved facets as mirrors.

Original languageEnglish
Pages (from-to)275-277
Number of pages3
JournalIEEE Photonics Technology Letters
Volume13
Issue number4
DOIs
StatePublished - Apr 2001

Keywords

  • InGaAlAs
  • Semiconductor lasers
  • Strained quantum-well lasers

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