High structural quality InGaN/GaN multiple quantum well solar cells

Ezgi Dogmus; Malek Zegaoui; Ludovic Largeau; Maria Tchernycheva; Vladimir Neplokh; Saskia Weiszer; Fabian Schuster; Martin Stutzmann; Martin Foldyna; Farid Medjdoub

doi:10.1002/pssc.201510137

High structural quality InGaN/GaN multiple quantum well solar cells

Ezgi Dogmus, Malek Zegaoui, Ludovic Largeau, Maria Tchernycheva, Vladimir Neplokh, Saskia Weiszer, Fabian Schuster, Martin Stutzmann, Martin Foldyna, Farid Medjdoub

Default

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this paper, we report on high structural quality of above 15% indium content InGaN/GaN multiple quantum well (MQW) structures with high equivalent thickness for solar cell applications. The structural and optical characterizations revealed fully strained 25 pairs of InGaN/GaN MQW solar cells with 24% indium content which shows extended spectral response up to 530 nm. In particular, defect density of the active region of In_0.15 Ga_0.85N/GaN MQW solar cell has been assessed in top view electron beam induced current (EBIC) analysis.

Original language	English
Pages (from-to)	1412-1415
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	12
Issue number	12
DOIs	https://doi.org/10.1002/pssc.201510137
State	Published - 1 Dec 2015

Keywords

Characterization
InGaN
Multiple quantum wells
Solar cells

Access to Document

10.1002/pssc.201510137

Cite this

@article{1990466ec05b4902bcd082ec852de783,

title = "High structural quality InGaN/GaN multiple quantum well solar cells",

abstract = "In this paper, we report on high structural quality of above 15% indium content InGaN/GaN multiple quantum well (MQW) structures with high equivalent thickness for solar cell applications. The structural and optical characterizations revealed fully strained 25 pairs of InGaN/GaN MQW solar cells with 24% indium content which shows extended spectral response up to 530 nm. In particular, defect density of the active region of In0.15 Ga0.85N/GaN MQW solar cell has been assessed in top view electron beam induced current (EBIC) analysis.",

keywords = "Characterization, InGaN, Multiple quantum wells, Solar cells",

author = "Ezgi Dogmus and Malek Zegaoui and Ludovic Largeau and Maria Tchernycheva and Vladimir Neplokh and Saskia Weiszer and Fabian Schuster and Martin Stutzmann and Martin Foldyna and Farid Medjdoub",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2015",

month = dec,

day = "1",

doi = "10.1002/pssc.201510137",

language = "English",

volume = "12",

pages = "1412--1415",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "12",

}

TY - JOUR

T1 - High structural quality InGaN/GaN multiple quantum well solar cells

AU - Dogmus, Ezgi

AU - Zegaoui, Malek

AU - Largeau, Ludovic

AU - Tchernycheva, Maria

AU - Neplokh, Vladimir

AU - Weiszer, Saskia

AU - Schuster, Fabian

AU - Stutzmann, Martin

AU - Foldyna, Martin

AU - Medjdoub, Farid

PY - 2015/12/1

Y1 - 2015/12/1

N2 - In this paper, we report on high structural quality of above 15% indium content InGaN/GaN multiple quantum well (MQW) structures with high equivalent thickness for solar cell applications. The structural and optical characterizations revealed fully strained 25 pairs of InGaN/GaN MQW solar cells with 24% indium content which shows extended spectral response up to 530 nm. In particular, defect density of the active region of In0.15 Ga0.85N/GaN MQW solar cell has been assessed in top view electron beam induced current (EBIC) analysis.

AB - In this paper, we report on high structural quality of above 15% indium content InGaN/GaN multiple quantum well (MQW) structures with high equivalent thickness for solar cell applications. The structural and optical characterizations revealed fully strained 25 pairs of InGaN/GaN MQW solar cells with 24% indium content which shows extended spectral response up to 530 nm. In particular, defect density of the active region of In0.15 Ga0.85N/GaN MQW solar cell has been assessed in top view electron beam induced current (EBIC) analysis.

KW - Characterization

KW - InGaN

KW - Multiple quantum wells

KW - Solar cells

UR - http://www.scopus.com/inward/record.url?scp=84941903901&partnerID=8YFLogxK

U2 - 10.1002/pssc.201510137

DO - 10.1002/pssc.201510137

M3 - Article

AN - SCOPUS:84941903901

SN - 1862-6351

VL - 12

SP - 1412

EP - 1415

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 12

ER -

High structural quality InGaN/GaN multiple quantum well solar cells

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this