High structural quality InGaN/GaN multiple quantum well solar cells

Ezgi Dogmus, Malek Zegaoui, Ludovic Largeau, Maria Tchernycheva, Vladimir Neplokh, Saskia Weiszer, Fabian Schuster, Martin Stutzmann, Martin Foldyna, Farid Medjdoub

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this paper, we report on high structural quality of above 15% indium content InGaN/GaN multiple quantum well (MQW) structures with high equivalent thickness for solar cell applications. The structural and optical characterizations revealed fully strained 25 pairs of InGaN/GaN MQW solar cells with 24% indium content which shows extended spectral response up to 530 nm. In particular, defect density of the active region of In0.15 Ga0.85N/GaN MQW solar cell has been assessed in top view electron beam induced current (EBIC) analysis.

Original languageEnglish
Pages (from-to)1412-1415
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume12
Issue number12
DOIs
StatePublished - 1 Dec 2015

Keywords

  • Characterization
  • InGaN
  • Multiple quantum wells
  • Solar cells

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