High speed (>11 GHz) modulation of BCB-passivated 1.55 ;μm InGaAlAs-InP VCSELs

W. Hofmann; N. H. Zhu; M. Ortsiefer; G. Böhm; Y. Liu; M. C. Amann

doi:10.1049/el:20061733

High speed (>11 GHz) modulation of BCB-passivated 1.55 ;μm InGaAlAs-InP VCSELs

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Böhm, Y. Liu, M. C. Amann

Chair of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

MBE-grown InGaAlAs-InP vertical cavity surface emitting lasers with buried tunnel junction for 1.55m wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts, are presented. The devices show superior modulation bandwidths up to 11.6GHz. Wide open eye diagrams with 6dB extinction ratio enable error-free data transmission at 10Gbit/s in back-to-back configuration and over different fibres.

Original language	English
Pages (from-to)	976-978
Number of pages	3
Journal	Electronics Letters
Volume	42
Issue number	17
DOIs	https://doi.org/10.1049/el:20061733
State	Published - 2006

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title = "High speed (>11 GHz) modulation of BCB-passivated 1.55 ;μm InGaAlAs-InP VCSELs",

abstract = "MBE-grown InGaAlAs-InP vertical cavity surface emitting lasers with buried tunnel junction for 1.55m wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts, are presented. The devices show superior modulation bandwidths up to 11.6GHz. Wide open eye diagrams with 6dB extinction ratio enable error-free data transmission at 10Gbit/s in back-to-back configuration and over different fibres.",

author = "W. Hofmann and Zhu, {N. H.} and M. Ortsiefer and G. B{\"o}hm and Y. Liu and Amann, {M. C.}",

year = "2006",

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pages = "976--978",

journal = "Electronics Letters",

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T1 - High speed (>11 GHz) modulation of BCB-passivated 1.55 ;μm InGaAlAs-InP VCSELs

AU - Hofmann, W.

AU - Zhu, N. H.

AU - Ortsiefer, M.

AU - Böhm, G.

AU - Liu, Y.

AU - Amann, M. C.

PY - 2006

Y1 - 2006

N2 - MBE-grown InGaAlAs-InP vertical cavity surface emitting lasers with buried tunnel junction for 1.55m wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts, are presented. The devices show superior modulation bandwidths up to 11.6GHz. Wide open eye diagrams with 6dB extinction ratio enable error-free data transmission at 10Gbit/s in back-to-back configuration and over different fibres.

AB - MBE-grown InGaAlAs-InP vertical cavity surface emitting lasers with buried tunnel junction for 1.55m wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts, are presented. The devices show superior modulation bandwidths up to 11.6GHz. Wide open eye diagrams with 6dB extinction ratio enable error-free data transmission at 10Gbit/s in back-to-back configuration and over different fibres.

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U2 - 10.1049/el:20061733

DO - 10.1049/el:20061733

M3 - Article

AN - SCOPUS:33747763330

SN - 0013-5194

VL - 42

SP - 976

EP - 978

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

High speed (>11 GHz) modulation of BCB-passivated 1.55 ;μm InGaAlAs-InP VCSELs

Abstract

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