@inproceedings{7dc5aa98ed884548abcc946ec66c1db1,
title = "High resolution imaging of twin intersections in Si/Ge superlattices on Ge(001) substrates",
abstract = "The formation of twin bands represents the only relaxation mechanism we observed in Si/Ge superlattices grown on Ge(001) substrates. High-resolution electron microscopy was applied to study the dislocation reactions which determine the defect structure of microtwin intersections. Based on these results a general dislocation model for multiple twinning in diamond structure semiconductors leading to polytypic transformations and particularily to the diamond hexagonal phase is proposed.",
author = "W. Wegscheider and K. Eberl and G. Abstreiter and H. Cerva and H. Oppolzer",
year = "1991",
language = "English",
isbn = "0854984062",
series = "Institute of Physics Conference Series",
publisher = "Publ by Inst of Physics Publ Ltd",
number = "117",
pages = "21--26",
booktitle = "Institute of Physics Conference Series",
edition = "117",
note = "Proceedings of the Conference on Microscopy of Semiconducting Materials 1991 ; Conference date: 25-03-1991 Through 28-03-1991",
}