High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance

C. M. Engelhardt; D. Többen; M. Aschauer; F. Schäffler; G. Abstreiter; E. Gornik

doi:10.1016/0038-1101(94)90333-6

High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance

C. M. Engelhardt, D. Többen, M. Aschauer, F. Schäffler, G. Abstreiter, E. Gornik

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

High mobility two-dimensional hole gases have been achieved in p-type modulation doped Ge/SiGe heterostructures grown by MBE on a relaxed graded SiGe buffer. Hall mobilities of up to 15,500 cm²/Vs at carrier densities of 1.04 × 10¹²cm^-2 are observed at 0.4 K in magnetotransport. The cyclotron resonance (CR) shows a narrow (FWHM 15 cm^-1) and strong absorption of up to 15%. Quantum transitions are resolved. A splitting of the CR is observed, attributed to the lifting of the spin degeneracy of the ±3/2 states at B = 0 due to the asymmetric confinement potential. Mean CR masses of 0.14 m₀ up to 0.20 m₀ are found depending on well width and carrier density.

Original language	English
Pages (from-to)	949-952
Number of pages	4
Journal	Solid-State Electronics
Volume	37
Issue number	4-6
DOIs	https://doi.org/10.1016/0038-1101(94)90333-6
State	Published - 1994

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title = "High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance",

abstract = "High mobility two-dimensional hole gases have been achieved in p-type modulation doped Ge/SiGe heterostructures grown by MBE on a relaxed graded SiGe buffer. Hall mobilities of up to 15,500 cm2/Vs at carrier densities of 1.04 × 1012cm-2 are observed at 0.4 K in magnetotransport. The cyclotron resonance (CR) shows a narrow (FWHM 15 cm-1) and strong absorption of up to 15\%. Quantum transitions are resolved. A splitting of the CR is observed, attributed to the lifting of the spin degeneracy of the ±3/2 states at B = 0 due to the asymmetric confinement potential. Mean CR masses of 0.14 m0 up to 0.20 m0 are found depending on well width and carrier density.",

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T1 - High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance

AU - Engelhardt, C. M.

AU - Többen, D.

AU - Aschauer, M.

AU - Schäffler, F.

AU - Abstreiter, G.

AU - Gornik, E.

PY - 1994

Y1 - 1994

N2 - High mobility two-dimensional hole gases have been achieved in p-type modulation doped Ge/SiGe heterostructures grown by MBE on a relaxed graded SiGe buffer. Hall mobilities of up to 15,500 cm2/Vs at carrier densities of 1.04 × 1012cm-2 are observed at 0.4 K in magnetotransport. The cyclotron resonance (CR) shows a narrow (FWHM 15 cm-1) and strong absorption of up to 15%. Quantum transitions are resolved. A splitting of the CR is observed, attributed to the lifting of the spin degeneracy of the ±3/2 states at B = 0 due to the asymmetric confinement potential. Mean CR masses of 0.14 m0 up to 0.20 m0 are found depending on well width and carrier density.

AB - High mobility two-dimensional hole gases have been achieved in p-type modulation doped Ge/SiGe heterostructures grown by MBE on a relaxed graded SiGe buffer. Hall mobilities of up to 15,500 cm2/Vs at carrier densities of 1.04 × 1012cm-2 are observed at 0.4 K in magnetotransport. The cyclotron resonance (CR) shows a narrow (FWHM 15 cm-1) and strong absorption of up to 15%. Quantum transitions are resolved. A splitting of the CR is observed, attributed to the lifting of the spin degeneracy of the ±3/2 states at B = 0 due to the asymmetric confinement potential. Mean CR masses of 0.14 m0 up to 0.20 m0 are found depending on well width and carrier density.

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High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance

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