High electron mobility in modulation-doped Si/SiGe quantum well structures

G. Schuberth; F. Schäffler; M. Besson; G. Abstreiter; E. Gornik

doi:10.1063/1.105718

High electron mobility in modulation-doped Si/SiGe quantum well structures

G. Schuberth, F. Schäffler, M. Besson, G. Abstreiter, E. Gornik

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Modulation-doped multiple quantum well structures based on Si/SiGe have been grown by molecular beam epitaxy. Low-temperature electron mobilities up to 17 000 cm²/V s have been achieved in narrow Si quantum wells. The electronic properties of the strain symmetrized Si/SiGe multilayer structures were studied by magnetotransport and cyclotron resonance experiments. The results are consistent with subband calculations which take the strain-induced splitting of the conduction band and the lowering of two valleys into account.

Original language	English
Pages (from-to)	3318-3320
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	25
DOIs	https://doi.org/10.1063/1.105718
State	Published - 1991

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abstract = "Modulation-doped multiple quantum well structures based on Si/SiGe have been grown by molecular beam epitaxy. Low-temperature electron mobilities up to 17 000 cm2/V s have been achieved in narrow Si quantum wells. The electronic properties of the strain symmetrized Si/SiGe multilayer structures were studied by magnetotransport and cyclotron resonance experiments. The results are consistent with subband calculations which take the strain-induced splitting of the conduction band and the lowering of two valleys into account.",

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AU - Schuberth, G.

AU - Schäffler, F.

AU - Besson, M.

AU - Abstreiter, G.

AU - Gornik, E.

PY - 1991

Y1 - 1991

N2 - Modulation-doped multiple quantum well structures based on Si/SiGe have been grown by molecular beam epitaxy. Low-temperature electron mobilities up to 17 000 cm2/V s have been achieved in narrow Si quantum wells. The electronic properties of the strain symmetrized Si/SiGe multilayer structures were studied by magnetotransport and cyclotron resonance experiments. The results are consistent with subband calculations which take the strain-induced splitting of the conduction band and the lowering of two valleys into account.

AB - Modulation-doped multiple quantum well structures based on Si/SiGe have been grown by molecular beam epitaxy. Low-temperature electron mobilities up to 17 000 cm2/V s have been achieved in narrow Si quantum wells. The electronic properties of the strain symmetrized Si/SiGe multilayer structures were studied by magnetotransport and cyclotron resonance experiments. The results are consistent with subband calculations which take the strain-induced splitting of the conduction band and the lowering of two valleys into account.

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High electron mobility in modulation-doped Si/SiGe quantum well structures

Abstract

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