Abstract
A remarkable improvement of external efficiency is achieved in double-heterojunction GaAs-GaAlAs superluminescent diodes (d.h. s.l.d.s) by application of antireflective coatings on the front face. The external differential quantum efficiency of 750–1500 µm long s.l.d.s increased from 1·2% to 4·5% (n.a. = 0·7) after coating the front face with a quarter-wavelength silicon-monoxide film.
| Original language | English |
|---|---|
| Pages (from-to) | 41-42 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 15 |
| Issue number | 2 |
| DOIs | |
| State | Published - 8 Jan 1979 |
| Externally published | Yes |
Keywords
- Light-emitting diodes
- Optical communication