High efficiency injectorless quantum cascade lasers emitting at 8.8 μm with 2-w peak pulsed power per facet at room temperature

H. Li, Simeon Katz, Augustinas Vizbaras, Gehard Boehm, Markus Christian Amann

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

An injectorless quantum cascade laser design using four material alloys and emitting around 8.8 μm at room temperature is presented. The coupling energy between the injection state and the upper laser level was increased compared to other injectorless designs to 10.6 meV. Devices with 85 repeats produce 2.0 W of pulsed output power per facet and an overall efficiency of 7.2% at 300 K. The threshold current density at room temperature is as low as 1.15 kA/cm 2 for an as-cleaved 4-mm-long device, with a characteristic temperature of 162 K.

Original languageEnglish
Article number5599286
Pages (from-to)1811-1813
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number24
DOIs
StatePublished - 2010

Keywords

  • Injectorless
  • midinfrared
  • quantum cascade lasers (QCLs)
  • semiconductor lasers

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