High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO 2/Si (111)

S. Hertenberger; S. Funk; K. Vizbaras; A. Yadav; D. Rudolph; J. Becker; S. Bolte; M. Döblinger; M. Bichler; G. Scarpa; P. Lugli; I. Zardo; J. J. Finley; M. C. Amann; G. Abstreiter; G. Koblmüller

doi:10.1063/1.4738769

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO ₂/Si (111)

S. Hertenberger, S. Funk, K. Vizbaras, A. Yadav, D. Rudolph, J. Becker, S. Bolte, M. Döblinger, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. J. Finley, M. C. Amann, G. Abstreiter, G. Koblmüller

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Abstract

We report improved homogeneity control of composition-tuned In _1-xGa _xAs (x 0.4) nanowire (NW) arrays grown by catalyst-free molecular beam epitaxy (MBE) on nanoimprinted SiO ₂/Si (111) substrates. Using very high As/(GaIn) ratios at growth temperatures of 550 °C enabled uniform incorporation of the respective group-III elements (In,Ga) over the investigated composition range, confirmed by high-resolution x-ray diffraction (HRXRD) and energy dispersive x-ray spectroscopy. Low-temperature (20 K) photoluminescence of these In-rich In _1-xGa _xAs NW ensembles reveal state-of-the-art linewidths of ∼29-33 meV. These are independent of Ga content, suggesting an overall low degree of phase separation. In contrast, self-assembled, non-periodic In _1-xGa _xAs NW arrays show larger inhomogeneity with increased peakwidths in 2θ-ω HRXRD scans as well as broadened Raman modes. These results demonstrate the excellent potential of site-selective MBE growth of high-periodicity non-tapered In _1-xGa _xAs NW arrays with low size and composition dispersion for optimized device integration on Si.

Original language	English
Article number	043116
Journal	Applied Physics Letters
Volume	101
Issue number	4
DOIs	https://doi.org/10.1063/1.4738769
State	Published - 23 Jul 2012

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Hertenberger, S., Funk, S., Vizbaras, K., Yadav, A., Rudolph, D., Becker, J., Bolte, S., Döblinger, M., Bichler, M., Scarpa, G., Lugli, P., Zardo, I., Finley, J. J., Amann, M. C., Abstreiter, G., & Koblmüller, G. (2012). High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO ₂/Si (111). Applied Physics Letters, 101(4), Article 043116. https://doi.org/10.1063/1.4738769

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title = "High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO 2/Si (111)",

abstract = "We report improved homogeneity control of composition-tuned In 1-xGa xAs (x 0.4) nanowire (NW) arrays grown by catalyst-free molecular beam epitaxy (MBE) on nanoimprinted SiO 2/Si (111) substrates. Using very high As/(GaIn) ratios at growth temperatures of 550 °C enabled uniform incorporation of the respective group-III elements (In,Ga) over the investigated composition range, confirmed by high-resolution x-ray diffraction (HRXRD) and energy dispersive x-ray spectroscopy. Low-temperature (20 K) photoluminescence of these In-rich In 1-xGa xAs NW ensembles reveal state-of-the-art linewidths of ∼29-33 meV. These are independent of Ga content, suggesting an overall low degree of phase separation. In contrast, self-assembled, non-periodic In 1-xGa xAs NW arrays show larger inhomogeneity with increased peakwidths in 2θ-ω HRXRD scans as well as broadened Raman modes. These results demonstrate the excellent potential of site-selective MBE growth of high-periodicity non-tapered In 1-xGa xAs NW arrays with low size and composition dispersion for optimized device integration on Si.",

author = "S. Hertenberger and S. Funk and K. Vizbaras and A. Yadav and D. Rudolph and J. Becker and S. Bolte and M. D{\"o}blinger and M. Bichler and G. Scarpa and P. Lugli and I. Zardo and Finley, {J. J.} and Amann, {M. C.} and G. Abstreiter and G. Koblm{\"u}ller",

year = "2012",

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doi = "10.1063/1.4738769",

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Hertenberger, S, Funk, S, Vizbaras, K, Yadav, A, Rudolph, D, Becker, J, Bolte, S, Döblinger, M, Bichler, M, Scarpa, G, Lugli, P, Zardo, I, Finley, JJ , Amann, MC , Abstreiter, G & Koblmüller, G 2012, 'High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO ₂/Si (111)', Applied Physics Letters, vol. 101, no. 4, 043116. https://doi.org/10.1063/1.4738769

TY - JOUR

T1 - High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO 2/Si (111)

AU - Hertenberger, S.

AU - Funk, S.

AU - Vizbaras, K.

AU - Yadav, A.

AU - Rudolph, D.

AU - Becker, J.

AU - Bolte, S.

AU - Döblinger, M.

AU - Bichler, M.

AU - Scarpa, G.

AU - Lugli, P.

AU - Zardo, I.

AU - Finley, J. J.

AU - Amann, M. C.

AU - Abstreiter, G.

AU - Koblmüller, G.

PY - 2012/7/23

Y1 - 2012/7/23

N2 - We report improved homogeneity control of composition-tuned In 1-xGa xAs (x 0.4) nanowire (NW) arrays grown by catalyst-free molecular beam epitaxy (MBE) on nanoimprinted SiO 2/Si (111) substrates. Using very high As/(GaIn) ratios at growth temperatures of 550 °C enabled uniform incorporation of the respective group-III elements (In,Ga) over the investigated composition range, confirmed by high-resolution x-ray diffraction (HRXRD) and energy dispersive x-ray spectroscopy. Low-temperature (20 K) photoluminescence of these In-rich In 1-xGa xAs NW ensembles reveal state-of-the-art linewidths of ∼29-33 meV. These are independent of Ga content, suggesting an overall low degree of phase separation. In contrast, self-assembled, non-periodic In 1-xGa xAs NW arrays show larger inhomogeneity with increased peakwidths in 2θ-ω HRXRD scans as well as broadened Raman modes. These results demonstrate the excellent potential of site-selective MBE growth of high-periodicity non-tapered In 1-xGa xAs NW arrays with low size and composition dispersion for optimized device integration on Si.

AB - We report improved homogeneity control of composition-tuned In 1-xGa xAs (x 0.4) nanowire (NW) arrays grown by catalyst-free molecular beam epitaxy (MBE) on nanoimprinted SiO 2/Si (111) substrates. Using very high As/(GaIn) ratios at growth temperatures of 550 °C enabled uniform incorporation of the respective group-III elements (In,Ga) over the investigated composition range, confirmed by high-resolution x-ray diffraction (HRXRD) and energy dispersive x-ray spectroscopy. Low-temperature (20 K) photoluminescence of these In-rich In 1-xGa xAs NW ensembles reveal state-of-the-art linewidths of ∼29-33 meV. These are independent of Ga content, suggesting an overall low degree of phase separation. In contrast, self-assembled, non-periodic In 1-xGa xAs NW arrays show larger inhomogeneity with increased peakwidths in 2θ-ω HRXRD scans as well as broadened Raman modes. These results demonstrate the excellent potential of site-selective MBE growth of high-periodicity non-tapered In 1-xGa xAs NW arrays with low size and composition dispersion for optimized device integration on Si.

UR - http://www.scopus.com/inward/record.url?scp=84864491945&partnerID=8YFLogxK

U2 - 10.1063/1.4738769

DO - 10.1063/1.4738769

M3 - Article

AN - SCOPUS:84864491945

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043116

ER -

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO ₂/Si (111)

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