High abstraction level permutational ESD concept analysis

M. Streibl, F. Zangl, K. Esmark, R. Schwencker, W. Stadler, H. Gossner, S. Druen, D. Schmitt-Landsiedel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

A simulation approach is presented that allows to handle ESD simulation and analysis on a chip level complexity. In a Monte-Carlo like permutational simulation approach worst case ESD paths are identified. The simulator is embedded in an ESD analysis framework spanning from the chip protection description to an automated virtual HBM test routine with a respective fail reporting interface. The tools capabilities are demonstrated in the ESD analysis of a complex mixed signal design.

Original languageEnglish
Title of host publication2003 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003
PublisherESD Association
ISBN (Electronic)1585370576, 9781585370573
StatePublished - 2003
Event25th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003 - Las Vegas, United States
Duration: 21 Sep 200325 Sep 2003

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
Volume2003-January
ISSN (Print)0739-5159

Conference

Conference25th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003
Country/TerritoryUnited States
CityLas Vegas
Period21/09/0325/09/03

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