High abstraction level permutational ESD concept analysis

M. Streibl, F. Zängl, K. Esmark, R. Schwencker, W. Stadler, H. Gossner, S. Drüen, D. Schmitt-Landsiedel

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


A simulation approach is presented that allows handling ESD simulation and analysis on a chip-level complexity. In a Monte-Carlo like permutational simulation approach, worst case ESD paths are identified. The simulator is embedded in an ESD analysis framework spanning from the chip protection description to an automated virtual HBM test routine with a respective fail reporting interface. The tools capabilities are demonstrated in the ESD analysis of a complex mixed-signal design.

Original languageEnglish
Pages (from-to)313-321
Number of pages9
JournalMicroelectronics Reliability
Issue number2
StatePublished - Feb 2005


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