TY - JOUR
T1 - Heteroepitaxial growth of transition metal oxides using UHV laser molecular beam epitaxy
AU - Gross, R.
AU - Klein, J.
AU - Wiedenhorst, B.
AU - Hoefener, C.
AU - Schoop, U.
AU - Philipp, J. B.
AU - Schonecke, M.
AU - Herbstritt, F.
AU - Alff, L.
AU - Lu, Yafeng
AU - Marx, A.
AU - Schymon, S.
AU - Thienhaus, S.
AU - Mader, W.
PY - 2000
Y1 - 2000
N2 - We have grown heteroepitaxial thin film structures composed of various transition metal oxides such as the colossal magnetoresistance manganites, superconducting cuprates, ruthenates as well as insulating titanates on SrTiO3, NdGaO3 and LaAlO3 substrates using a UHV laser molecular beam epitaxy (laser-MBE) system. The film growth was controlled in-situ using high pressure RHEED as well as scanning probe techniques (AFM/STM). The fabricated films were analyzed by x-ray diffraction, transmission electron microscopy and the measurement of the transport properties. The manganite, ruthenate and titanate thin film structures show good epitaxy with small mosaic spread. The observation of RHEED oscillations during the film deposition indicates a layer by layer growth mode. This is further supported by the observed small surface roughness of typically less than 3 nm rms for a 100 nm thick film. We also could find a clear correlation between the observed RHEED pattern and the surface morphology measured by AFM/STM. Our analysis shows that UHV laser MBE is well suited for the fabrication of complicated heteroepitaxial thin film structures required for oxide electronics.
AB - We have grown heteroepitaxial thin film structures composed of various transition metal oxides such as the colossal magnetoresistance manganites, superconducting cuprates, ruthenates as well as insulating titanates on SrTiO3, NdGaO3 and LaAlO3 substrates using a UHV laser molecular beam epitaxy (laser-MBE) system. The film growth was controlled in-situ using high pressure RHEED as well as scanning probe techniques (AFM/STM). The fabricated films were analyzed by x-ray diffraction, transmission electron microscopy and the measurement of the transport properties. The manganite, ruthenate and titanate thin film structures show good epitaxy with small mosaic spread. The observation of RHEED oscillations during the film deposition indicates a layer by layer growth mode. This is further supported by the observed small surface roughness of typically less than 3 nm rms for a 100 nm thick film. We also could find a clear correlation between the observed RHEED pattern and the surface morphology measured by AFM/STM. Our analysis shows that UHV laser MBE is well suited for the fabrication of complicated heteroepitaxial thin film structures required for oxide electronics.
UR - http://www.scopus.com/inward/record.url?scp=0033695831&partnerID=8YFLogxK
U2 - 10.1117/12.397845
DO - 10.1117/12.397845
M3 - Conference article
AN - SCOPUS:0033695831
SN - 0277-786X
VL - 4058
SP - 278
EP - 294
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Superconducting and Related Oxides:Physics and Nanoengineering IV
Y2 - 24 April 2000 through 28 April 2000
ER -