Hall effect, magnetization, and conductivity of Fe3 O4 epitaxial thin films

D. Reisinger, P. Majewski, M. Opel, L. Alff, R. Gross

Research output: Contribution to journalArticlepeer-review

73 Scopus citations

Abstract

Magnetite epitaxial thin films have been prepared by pulsed laser deposition on MgO and Si substrates. The magnetic and electrical properties of these epitaxial films are close to those of single crystals. For 40-50 nm thick films, the saturation magnetization and electrical conductivity are ~450 emu cm3 and 225 -1 cm-1 at room temperature, respectively. The Verwey transition temperature is 117 K. The Hall effect data yield an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Both normal and anomalous Hall effect have been found to have negative sign.

Original languageEnglish
Pages (from-to)4980-4982
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number21
DOIs
StatePublished - Nov 2004
Externally publishedYes

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