Hall effect and magnetoresistance in MnSi

A. Neubauer; C. Pfleiderer; R. Ritz; P. G. Niklowitz; P. Böni

doi:10.1016/j.physb.2009.07.055

Hall effect and magnetoresistance in MnSi

A. Neubauer
, C. Pfleiderer
, R. Ritz
, P. G. Niklowitz
, P. Böni

Technical University of Munich
University of London

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report the transverse magnetoresistance ρ_xx and Hall effect ρ_xy in MnSi between room temperature and 2.5 K for magnetic field up to 9 T. Magnetic field suppresses the resistivity at all temperatures and fields, characteristic of scattering by an abundance of soft magnetic fluctuations that are quenched by magnetic field. Anomalous contributions to the Hall effect for temperatures below the onset of helimagnetic order, T < T_c = 29.5 K, and magnetic field B < 5 T are proportional to S_H ρ_xx² M with a proportionality constant S_H that is essentially temperature independent and M the uniform magnetization. Above the helimagnetic transition temperature this description fails. We propose that additional effects have to be considered for a comprehensive account of the Hall effect and magnetoresistance in MnSi.

Original language	English
Pages (from-to)	3163-3166
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	404
Issue number	19
DOIs	https://doi.org/10.1016/j.physb.2009.07.055
State	Published - 15 Oct 2009

Keywords

Hall effect
Itinerant magnetism
Magnetoresistance

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10.1016/j.physb.2009.07.055

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title = "Hall effect and magnetoresistance in MnSi",

abstract = "We report the transverse magnetoresistance ρxx and Hall effect ρxy in MnSi between room temperature and 2.5 K for magnetic field up to 9 T. Magnetic field suppresses the resistivity at all temperatures and fields, characteristic of scattering by an abundance of soft magnetic fluctuations that are quenched by magnetic field. Anomalous contributions to the Hall effect for temperatures below the onset of helimagnetic order, T < Tc = 29.5 K, and magnetic field B < 5 T are proportional to SH ρxx2 M with a proportionality constant SH that is essentially temperature independent and M the uniform magnetization. Above the helimagnetic transition temperature this description fails. We propose that additional effects have to be considered for a comprehensive account of the Hall effect and magnetoresistance in MnSi.",

keywords = "Hall effect, Itinerant magnetism, Magnetoresistance",

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doi = "10.1016/j.physb.2009.07.055",

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T1 - Hall effect and magnetoresistance in MnSi

AU - Neubauer, A.

AU - Pfleiderer, C.

AU - Ritz, R.

AU - Niklowitz, P. G.

AU - Böni, P.

PY - 2009/10/15

Y1 - 2009/10/15

N2 - We report the transverse magnetoresistance ρxx and Hall effect ρxy in MnSi between room temperature and 2.5 K for magnetic field up to 9 T. Magnetic field suppresses the resistivity at all temperatures and fields, characteristic of scattering by an abundance of soft magnetic fluctuations that are quenched by magnetic field. Anomalous contributions to the Hall effect for temperatures below the onset of helimagnetic order, T < Tc = 29.5 K, and magnetic field B < 5 T are proportional to SH ρxx2 M with a proportionality constant SH that is essentially temperature independent and M the uniform magnetization. Above the helimagnetic transition temperature this description fails. We propose that additional effects have to be considered for a comprehensive account of the Hall effect and magnetoresistance in MnSi.

AB - We report the transverse magnetoresistance ρxx and Hall effect ρxy in MnSi between room temperature and 2.5 K for magnetic field up to 9 T. Magnetic field suppresses the resistivity at all temperatures and fields, characteristic of scattering by an abundance of soft magnetic fluctuations that are quenched by magnetic field. Anomalous contributions to the Hall effect for temperatures below the onset of helimagnetic order, T < Tc = 29.5 K, and magnetic field B < 5 T are proportional to SH ρxx2 M with a proportionality constant SH that is essentially temperature independent and M the uniform magnetization. Above the helimagnetic transition temperature this description fails. We propose that additional effects have to be considered for a comprehensive account of the Hall effect and magnetoresistance in MnSi.

KW - Hall effect

KW - Itinerant magnetism

KW - Magnetoresistance

UR - https://www.scopus.com/pages/publications/70349094847

U2 - 10.1016/j.physb.2009.07.055

DO - 10.1016/j.physb.2009.07.055

M3 - Article

AN - SCOPUS:70349094847

SN - 0921-4526

VL - 404

SP - 3163

EP - 3166

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 19

ER -

Hall effect and magnetoresistance in MnSi

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