Hafnium oxide thin film grown by ALD: An XPS study

Davide Barreca; Andrian Milanov; Roland A. Fischer; Anjana Devi; Eugenio Tondello

doi:10.1116/11.20080401

Hafnium oxide thin film grown by ALD: An XPS study

Davide Barreca
, Andrian Milanov
, Roland A. Fischer
, Anjana Devi
, Eugenio Tondello

University of Padova
Max-Planck-lnstitut für Kohlenforschung

Research output: Contribution to journal › Article › peer-review

136 Scopus citations

Abstract

Hafnium(IV) oxide thin films were synthesized by atomic layer deposition (ALD) on Si(100) substrates, using an innovative guanidinate-stabilized hafnium amide precursor, [Hf(NEtMe)₂(EtMeNC(NⁱPr)₂)₂]. In the present work, our attention is focused on a detailed XPS characterization of a representative HfO₂ coating grown at 350 °C. Beside the wide scan spectrum, detailed spectra for the O 1s, Hf 4f, Hf 4d and C 1s regions and related data are presented and discussed. The obtained results point out to the formation of HfO₂ coatings characterized by the presence of -OH groups, whose main origin is attributed to the use of water as oxidizing agent during the preparation process.

Original language	English
Article number	SSSPEN000014000001000034000001
Pages (from-to)	34-40
Number of pages	7
Journal	Surface Science Spectra
Volume	14
Issue number	1-4
DOIs	https://doi.org/10.1116/11.20080401
State	Published - 2007
Externally published	Yes

Keywords

ALD
HfO
Thin film
X-ray Photoelectron Spectroscopy

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10.1116/11.20080401

Cite this

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title = "Hafnium oxide thin film grown by ALD: An XPS study",

abstract = "Hafnium(IV) oxide thin films were synthesized by atomic layer deposition (ALD) on Si(100) substrates, using an innovative guanidinate-stabilized hafnium amide precursor, [Hf(NEtMe)2(EtMeNC(NiPr)2)2]. In the present work, our attention is focused on a detailed XPS characterization of a representative HfO2 coating grown at 350 °C. Beside the wide scan spectrum, detailed spectra for the O 1s, Hf 4f, Hf 4d and C 1s regions and related data are presented and discussed. The obtained results point out to the formation of HfO2 coatings characterized by the presence of -OH groups, whose main origin is attributed to the use of water as oxidizing agent during the preparation process.",

keywords = "ALD, HfO, Thin film, X-ray Photoelectron Spectroscopy",

author = "Davide Barreca and Andrian Milanov and Fischer, \{Roland A.\} and Anjana Devi and Eugenio Tondello",

year = "2007",

doi = "10.1116/11.20080401",

language = "English",

volume = "14",

pages = "34--40",

journal = "Surface Science Spectra",

issn = "1055-5269",

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TY - JOUR

T1 - Hafnium oxide thin film grown by ALD

T2 - An XPS study

AU - Barreca, Davide

AU - Milanov, Andrian

AU - Fischer, Roland A.

AU - Devi, Anjana

AU - Tondello, Eugenio

PY - 2007

Y1 - 2007

N2 - Hafnium(IV) oxide thin films were synthesized by atomic layer deposition (ALD) on Si(100) substrates, using an innovative guanidinate-stabilized hafnium amide precursor, [Hf(NEtMe)2(EtMeNC(NiPr)2)2]. In the present work, our attention is focused on a detailed XPS characterization of a representative HfO2 coating grown at 350 °C. Beside the wide scan spectrum, detailed spectra for the O 1s, Hf 4f, Hf 4d and C 1s regions and related data are presented and discussed. The obtained results point out to the formation of HfO2 coatings characterized by the presence of -OH groups, whose main origin is attributed to the use of water as oxidizing agent during the preparation process.

AB - Hafnium(IV) oxide thin films were synthesized by atomic layer deposition (ALD) on Si(100) substrates, using an innovative guanidinate-stabilized hafnium amide precursor, [Hf(NEtMe)2(EtMeNC(NiPr)2)2]. In the present work, our attention is focused on a detailed XPS characterization of a representative HfO2 coating grown at 350 °C. Beside the wide scan spectrum, detailed spectra for the O 1s, Hf 4f, Hf 4d and C 1s regions and related data are presented and discussed. The obtained results point out to the formation of HfO2 coatings characterized by the presence of -OH groups, whose main origin is attributed to the use of water as oxidizing agent during the preparation process.

KW - ALD

KW - HfO

KW - Thin film

KW - X-ray Photoelectron Spectroscopy

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U2 - 10.1116/11.20080401

DO - 10.1116/11.20080401

M3 - Article

AN - SCOPUS:77951550776

SN - 1055-5269

VL - 14

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JF - Surface Science Spectra

IS - 1-4

M1 - SSSPEN000014000001000034000001

ER -

Hafnium oxide thin film grown by ALD: An XPS study

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Keywords

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