Guided self assembly of InAs quantum dots on a cleaved facet

Emanuele Uccelli; Dieter Schuh; Jochen Bauer; Max Bichler; Jonathan J. Finley; Matthew Grayson; Gerhard Abstreiter; Anna Fontcuberta I. Morral

Guided self assembly of InAs quantum dots on a cleaved facet

Emanuele Uccelli, Dieter Schuh, Jochen Bauer, Max Bichler, Jonathan J. Finley, Matthew Grayson, Gerhard Abstreiter, Anna Fontcuberta I. Morral

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The long range ordering of epitaxial semiconductor quantum dots (QDs) has been obtained by combing self assembly with the cleaved edge overgrowth technique. The introduction of nanometer thick AlAs stripes on a (110) oriented GaAs surface avoids the misfit dislocation growth mechanism of InAs on GaAs (110) and drives the formation of array of QDs. Atomic Force Microscopy (AFM) investigations highlight that InAs QDs only nucleate in chain like structure on Al-rich regions. Here, we present experimental results that demonstrate the ability to create ordered QDs lattices and discuss the conditions under which preferential growth of QDs on the AlAs stripes occurs.

Original language	English
Title of host publication	Quantum Dots
Subtitle of host publication	Growth, Behavior and Applications
Pages	47-51
Number of pages	5
State	Published - 2007
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 27 Nov 2006 → 1 Dec 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	959
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	27/11/06 → 1/12/06

Cite this

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title = "Guided self assembly of InAs quantum dots on a cleaved facet",

abstract = "The long range ordering of epitaxial semiconductor quantum dots (QDs) has been obtained by combing self assembly with the cleaved edge overgrowth technique. The introduction of nanometer thick AlAs stripes on a (110) oriented GaAs surface avoids the misfit dislocation growth mechanism of InAs on GaAs (110) and drives the formation of array of QDs. Atomic Force Microscopy (AFM) investigations highlight that InAs QDs only nucleate in chain like structure on Al-rich regions. Here, we present experimental results that demonstrate the ability to create ordered QDs lattices and discuss the conditions under which preferential growth of QDs on the AlAs stripes occurs.",

author = "Emanuele Uccelli and Dieter Schuh and Jochen Bauer and Max Bichler and Finley, \{Jonathan J.\} and Matthew Grayson and Gerhard Abstreiter and Morral, \{Anna Fontcuberta I.\}",

year = "2007",

language = "English",

isbn = "9781604234343",

series = "Materials Research Society Symposium Proceedings",

pages = "47--51",

booktitle = "Quantum Dots",

note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",

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T1 - Guided self assembly of InAs quantum dots on a cleaved facet

AU - Uccelli, Emanuele

AU - Schuh, Dieter

AU - Bauer, Jochen

AU - Bichler, Max

AU - Finley, Jonathan J.

AU - Grayson, Matthew

AU - Abstreiter, Gerhard

AU - Morral, Anna Fontcuberta I.

PY - 2007

Y1 - 2007

N2 - The long range ordering of epitaxial semiconductor quantum dots (QDs) has been obtained by combing self assembly with the cleaved edge overgrowth technique. The introduction of nanometer thick AlAs stripes on a (110) oriented GaAs surface avoids the misfit dislocation growth mechanism of InAs on GaAs (110) and drives the formation of array of QDs. Atomic Force Microscopy (AFM) investigations highlight that InAs QDs only nucleate in chain like structure on Al-rich regions. Here, we present experimental results that demonstrate the ability to create ordered QDs lattices and discuss the conditions under which preferential growth of QDs on the AlAs stripes occurs.

AB - The long range ordering of epitaxial semiconductor quantum dots (QDs) has been obtained by combing self assembly with the cleaved edge overgrowth technique. The introduction of nanometer thick AlAs stripes on a (110) oriented GaAs surface avoids the misfit dislocation growth mechanism of InAs on GaAs (110) and drives the formation of array of QDs. Atomic Force Microscopy (AFM) investigations highlight that InAs QDs only nucleate in chain like structure on Al-rich regions. Here, we present experimental results that demonstrate the ability to create ordered QDs lattices and discuss the conditions under which preferential growth of QDs on the AlAs stripes occurs.

UR - http://www.scopus.com/inward/record.url?scp=40949135771&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:40949135771

SN - 9781604234343

T3 - Materials Research Society Symposium Proceedings

SP - 47

EP - 51

BT - Quantum Dots

T2 - 2006 MRS Fall Meeting

Y2 - 27 November 2006 through 1 December 2006

ER -

Guided self assembly of InAs quantum dots on a cleaved facet

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