Growth of InN whiskers from single source precursor

A. Devi, H. Parala, W. Rogge, A. Wohlfart, A. Birkner, R. A. Fischer

Research output: Contribution to journalConference articlepeer-review

Abstract

The group-III nitrides GaN, InN, AlN and their alloys InxGa1-xN, AlxGa1-xN have recently acquired technological importance for LED and laser applications. However, InN has a low decomposition temperature and the growth of crystalline InN material at low temperatures is difficult. One of the approaches is to design single source precursors that decompose at low temperatures. Single source precursors of the type N3In[(CH2)3NMe2]2 were developed and the growth of crystalline InN films with preferred orientation was achieved using this compound. However employing specific CVD process parameters we were able to grow InN whiskers consistently by CVD using a cold wall CVD reactor on sapphire substrates at 500°C. These whiskers were characterised by XRD, SEM, EDX and TEM measurements.

Original languageEnglish
Pages (from-to)Pr3577-Pr3584
JournalJournal De Physique. IV : JP
Volume11
Issue number3
DOIs
StatePublished - 2001
Externally publishedYes
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 26 Aug 200131 Aug 2001

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