Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 μm

Gerhard Boehm, Markus Grau, Oliver Dier, Kirsten Windhorn, Enno Roenneberg, Juergen Rosskopf, Robert Shau, Ralf Meyer, Markus Ortsiefer, Markus Christian Amann

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69 Scopus citations

Abstract

Vertical-cavity surface-emitting lasers are attractive light sources particularly for gas-sensing applications. Using the AlGaInAs/InP material system, an emission wavelength ranges from 1.3 to 2.05 μm has already been achieved [G. Boehm, M. Ortsiefer R. Shau, J. Rosskopf, C. Lauer, M. Maute, F. Köhler, F. Mederer, R. Meyer, M.-C. Amann, in: Proceedings of MBE XII, J. Crystal Growth (2002) pp. 748-753]. Within this range, absorption lines of gases like H2S (1590 nm), CH4 (1654 nm), H2O (1877 nm) and CO2 (2004 nm) are detectable [G. Totschnig, M. Lackner, R. Shau, M. Ortsiefer, J. Rosskopf, M.-C. Amann, F. Winter, Meas. Sci. Technol. 14 (2003) 472]. The aim of this work is a further expansion of the emission wavelength up to 2.3 μm, exploiting the well-known InP-based material system and the fabrication technique of buried tunnel junction (BTJ) VCSELs [R. Shau, M. Ortsiefer, J. Rosskopf, G. Boehm, C. Lauer, M. Maute, M.-C. Amann, in: Proceedings of SPIE, 5364 (2004) 1-15] to reach the technologically important absorption lines of carbon monoxide (CO) around 2.33 μm.

Original languageEnglish
Pages (from-to)941-944
Number of pages4
JournalJournal of Crystal Growth
Volume301-302
Issue numberSPEC. ISS.
DOIs
StatePublished - Apr 2007

Keywords

  • A3. Molecular beam epitaxy
  • B1. Arsenides
  • B2. Semiconducting quaternary alloys
  • B3. Infrared devices
  • B3. Laser diodes

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