TY - JOUR
T1 - Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 μm
AU - Boehm, Gerhard
AU - Grau, Markus
AU - Dier, Oliver
AU - Windhorn, Kirsten
AU - Roenneberg, Enno
AU - Rosskopf, Juergen
AU - Shau, Robert
AU - Meyer, Ralf
AU - Ortsiefer, Markus
AU - Amann, Markus Christian
PY - 2007/4
Y1 - 2007/4
N2 - Vertical-cavity surface-emitting lasers are attractive light sources particularly for gas-sensing applications. Using the AlGaInAs/InP material system, an emission wavelength ranges from 1.3 to 2.05 μm has already been achieved [G. Boehm, M. Ortsiefer R. Shau, J. Rosskopf, C. Lauer, M. Maute, F. Köhler, F. Mederer, R. Meyer, M.-C. Amann, in: Proceedings of MBE XII, J. Crystal Growth (2002) pp. 748-753]. Within this range, absorption lines of gases like H2S (1590 nm), CH4 (1654 nm), H2O (1877 nm) and CO2 (2004 nm) are detectable [G. Totschnig, M. Lackner, R. Shau, M. Ortsiefer, J. Rosskopf, M.-C. Amann, F. Winter, Meas. Sci. Technol. 14 (2003) 472]. The aim of this work is a further expansion of the emission wavelength up to 2.3 μm, exploiting the well-known InP-based material system and the fabrication technique of buried tunnel junction (BTJ) VCSELs [R. Shau, M. Ortsiefer, J. Rosskopf, G. Boehm, C. Lauer, M. Maute, M.-C. Amann, in: Proceedings of SPIE, 5364 (2004) 1-15] to reach the technologically important absorption lines of carbon monoxide (CO) around 2.33 μm.
AB - Vertical-cavity surface-emitting lasers are attractive light sources particularly for gas-sensing applications. Using the AlGaInAs/InP material system, an emission wavelength ranges from 1.3 to 2.05 μm has already been achieved [G. Boehm, M. Ortsiefer R. Shau, J. Rosskopf, C. Lauer, M. Maute, F. Köhler, F. Mederer, R. Meyer, M.-C. Amann, in: Proceedings of MBE XII, J. Crystal Growth (2002) pp. 748-753]. Within this range, absorption lines of gases like H2S (1590 nm), CH4 (1654 nm), H2O (1877 nm) and CO2 (2004 nm) are detectable [G. Totschnig, M. Lackner, R. Shau, M. Ortsiefer, J. Rosskopf, M.-C. Amann, F. Winter, Meas. Sci. Technol. 14 (2003) 472]. The aim of this work is a further expansion of the emission wavelength up to 2.3 μm, exploiting the well-known InP-based material system and the fabrication technique of buried tunnel junction (BTJ) VCSELs [R. Shau, M. Ortsiefer, J. Rosskopf, G. Boehm, C. Lauer, M. Maute, M.-C. Amann, in: Proceedings of SPIE, 5364 (2004) 1-15] to reach the technologically important absorption lines of carbon monoxide (CO) around 2.33 μm.
KW - A3. Molecular beam epitaxy
KW - B1. Arsenides
KW - B2. Semiconducting quaternary alloys
KW - B3. Infrared devices
KW - B3. Laser diodes
UR - http://www.scopus.com/inward/record.url?scp=33947324345&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2006.11.098
DO - 10.1016/j.jcrysgro.2006.11.098
M3 - Article
AN - SCOPUS:33947324345
SN - 0022-0248
VL - 301-302
SP - 941
EP - 944
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - SPEC. ISS.
ER -