Growth of high quality InGaAsN heterostructures and their laser application

A. Yu Egorov; D. Bernklau; B. Borchert; S. Illek; D. Livshits; A. Rucki; M. Schuster; A. Kaschner; A. Hoffmann; Gh Dumitras; M. C. Amann; H. Riechert

doi:10.1016/S0022-0248(01)00764-3

Growth of high quality InGaAsN heterostructures and their laser application

A. Yu Egorov, D. Bernklau, B. Borchert, S. Illek, D. Livshits, A. Rucki, M. Schuster, A. Kaschner, A. Hoffmann, Gh Dumitras, M. C. Amann, H. Riechert

Chair of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

74 Scopus citations

Abstract

Focus of this work is the optimization of growth to achieve high quality laser material for emission at 1.3 μm and beyond. GaAs/GaAsN/InGaAsN heterostructures were grown by solid source molecular beam epitaxy. To achieve optimum crystal quality of InGaAsN heterostructures, growth was followed by a high temperature treatment at about 700°C. The high optical quality of our annealed material is attested by large exciton recombination lifetimes (more than 2 ns). Consequently, a decrease of single quantum well transparency current density down to 100 A/cm² is found and SWQ lasers with threshold current densities as low as 350 A/cm² have been made. This represents clearly the lowest laser thresholds reported so far for emission around 1.3 μm from the InGaAsN material system.

Original language	English
Pages (from-to)	545-552
Number of pages	8
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00764-3
State	Published - Jul 2001
Event	11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: 11 Sep 2000 → 15 Sep 2000

Keywords

B1. Nitrides
B2. Semiconducting gallium arsenide
B3. Laser diodes

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10.1016/S0022-0248(01)00764-3

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title = "Growth of high quality InGaAsN heterostructures and their laser application",

abstract = "Focus of this work is the optimization of growth to achieve high quality laser material for emission at 1.3 μm and beyond. GaAs/GaAsN/InGaAsN heterostructures were grown by solid source molecular beam epitaxy. To achieve optimum crystal quality of InGaAsN heterostructures, growth was followed by a high temperature treatment at about 700°C. The high optical quality of our annealed material is attested by large exciton recombination lifetimes (more than 2 ns). Consequently, a decrease of single quantum well transparency current density down to 100 A/cm2 is found and SWQ lasers with threshold current densities as low as 350 A/cm2 have been made. This represents clearly the lowest laser thresholds reported so far for emission around 1.3 μm from the InGaAsN material system.",

keywords = "B1. Nitrides, B2. Semiconducting gallium arsenide, B3. Laser diodes",

author = "Egorov, {A. Yu} and D. Bernklau and B. Borchert and S. Illek and D. Livshits and A. Rucki and M. Schuster and A. Kaschner and A. Hoffmann and Gh Dumitras and Amann, {M. C.} and H. Riechert",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00764-3",

language = "English",

volume = "227-228",

pages = "545--552",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

note = "11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

}

TY - JOUR

T1 - Growth of high quality InGaAsN heterostructures and their laser application

AU - Egorov, A. Yu

AU - Bernklau, D.

AU - Borchert, B.

AU - Illek, S.

AU - Livshits, D.

AU - Rucki, A.

AU - Schuster, M.

AU - Kaschner, A.

AU - Hoffmann, A.

AU - Dumitras, Gh

AU - Amann, M. C.

AU - Riechert, H.

PY - 2001/7

Y1 - 2001/7

N2 - Focus of this work is the optimization of growth to achieve high quality laser material for emission at 1.3 μm and beyond. GaAs/GaAsN/InGaAsN heterostructures were grown by solid source molecular beam epitaxy. To achieve optimum crystal quality of InGaAsN heterostructures, growth was followed by a high temperature treatment at about 700°C. The high optical quality of our annealed material is attested by large exciton recombination lifetimes (more than 2 ns). Consequently, a decrease of single quantum well transparency current density down to 100 A/cm2 is found and SWQ lasers with threshold current densities as low as 350 A/cm2 have been made. This represents clearly the lowest laser thresholds reported so far for emission around 1.3 μm from the InGaAsN material system.

AB - Focus of this work is the optimization of growth to achieve high quality laser material for emission at 1.3 μm and beyond. GaAs/GaAsN/InGaAsN heterostructures were grown by solid source molecular beam epitaxy. To achieve optimum crystal quality of InGaAsN heterostructures, growth was followed by a high temperature treatment at about 700°C. The high optical quality of our annealed material is attested by large exciton recombination lifetimes (more than 2 ns). Consequently, a decrease of single quantum well transparency current density down to 100 A/cm2 is found and SWQ lasers with threshold current densities as low as 350 A/cm2 have been made. This represents clearly the lowest laser thresholds reported so far for emission around 1.3 μm from the InGaAsN material system.

KW - B1. Nitrides

KW - B2. Semiconducting gallium arsenide

KW - B3. Laser diodes

UR - http://www.scopus.com/inward/record.url?scp=0035399226&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)00764-3

DO - 10.1016/S0022-0248(01)00764-3

M3 - Conference article

AN - SCOPUS:0035399226

SN - 0022-0248

VL - 227-228

SP - 545

EP - 552

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -

Growth of high quality InGaAsN heterostructures and their laser application

Abstract

Keywords

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