Growth mechanisms of self-assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets

E. Uccelli; S. Nürnberger; M. Bichler; G. Abstreiter; A. Fontcuberta i Morral

doi:10.1016/j.spmi.2008.01.002

Growth mechanisms of self-assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets

E. Uccelli, S. Nürnberger, M. Bichler, G. Abstreiter, A. Fontcuberta i Morral

Natural Sciences

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The mechanism of selective epitaxial growth of InAs quantum dots on (110) AlAs/GaAs cleaved facets has been considered from a theoretical point of view. In particular, the role of the large difference in the diffusion length of In adatoms on GaAs and AlAs surfaces has been assessed. A simple one-dimensional model agrees with the experimental results, and explains the strong migration behavior of In(As) towards (110) AlAs stripes.

Original language	English
Pages (from-to)	425-430
Number of pages	6
Journal	Superlattices and Microstructures
Volume	44
Issue number	4-5
DOIs	https://doi.org/10.1016/j.spmi.2008.01.002
State	Published - Oct 2008

Keywords

Adatom diffusion length
Growth mechanism
InAs
MBE
Quantum dots chain

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10.1016/j.spmi.2008.01.002

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title = "Growth mechanisms of self-assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets",

abstract = "The mechanism of selective epitaxial growth of InAs quantum dots on (110) AlAs/GaAs cleaved facets has been considered from a theoretical point of view. In particular, the role of the large difference in the diffusion length of In adatoms on GaAs and AlAs surfaces has been assessed. A simple one-dimensional model agrees with the experimental results, and explains the strong migration behavior of In(As) towards (110) AlAs stripes.",

keywords = "Adatom diffusion length, Growth mechanism, InAs, MBE, Quantum dots chain",

author = "E. Uccelli and S. N{\"u}rnberger and M. Bichler and G. Abstreiter and \{Fontcuberta i Morral\}, A.",

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AU - Uccelli, E.

AU - Nürnberger, S.

AU - Bichler, M.

AU - Abstreiter, G.

AU - Fontcuberta i Morral, A.

PY - 2008/10

Y1 - 2008/10

N2 - The mechanism of selective epitaxial growth of InAs quantum dots on (110) AlAs/GaAs cleaved facets has been considered from a theoretical point of view. In particular, the role of the large difference in the diffusion length of In adatoms on GaAs and AlAs surfaces has been assessed. A simple one-dimensional model agrees with the experimental results, and explains the strong migration behavior of In(As) towards (110) AlAs stripes.

AB - The mechanism of selective epitaxial growth of InAs quantum dots on (110) AlAs/GaAs cleaved facets has been considered from a theoretical point of view. In particular, the role of the large difference in the diffusion length of In adatoms on GaAs and AlAs surfaces has been assessed. A simple one-dimensional model agrees with the experimental results, and explains the strong migration behavior of In(As) towards (110) AlAs stripes.

KW - Adatom diffusion length

KW - Growth mechanism

KW - InAs

KW - MBE

KW - Quantum dots chain

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DO - 10.1016/j.spmi.2008.01.002

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-5

ER -

Growth mechanisms of self-assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets

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Keywords

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