Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

Martin Heiß; Eva Riedlberger; Danče Spirkoska; Max Bichler; Gerhard Abstreiter; Anna Fontcuberta i. Morral

doi:10.1016/j.jcrysgro.2007.12.061

Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

Martin Heiß, Eva Riedlberger, Danče Spirkoska, Max Bichler, Gerhard Abstreiter, Anna Fontcuberta i. Morral

Natural Sciences

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Selective deposition of GaAs-based microstructures on a patterned SiO₂/GaAs substrate was realized by molecular beam epitaxy. The growth mechanism was investigated experimentally by studying both the diffusion and desorption mechanisms of GaAs on SiO₂ surfaces. A model describing the diffusion and desorption of adatoms on the patterned surface is presented. The theoretical considerations are used to determine experimentally the diffusion length and the sticking coefficient of Ga(As) on SiO₂ as a function of temperature. The growth results are applied to the fabrication of GaAs-based quantum well microsctructures. Finally, the optical properties of InGaAs and AlGaAs heterostructures were examined by micro-photoluminescence spectroscopy, indicating the good quality of the material deposited by this method.

Original language	English
Pages (from-to)	1049-1056
Number of pages	8
Journal	Journal of Crystal Growth
Volume	310
Issue number	6
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.12.061
State	Published - 15 Mar 2008

Keywords

A1. Growth model
A1. Nanowires
A3. Molecular beam epitaxy
A3. Selective area epitaxy
B1. Aluminium arsenide
B1. Indium arsenide
B1. Nanocolumns
B2. Semiconducting gallium arsenide

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10.1016/j.jcrysgro.2007.12.061

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title = "Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy",

abstract = "Selective deposition of GaAs-based microstructures on a patterned SiO2/GaAs substrate was realized by molecular beam epitaxy. The growth mechanism was investigated experimentally by studying both the diffusion and desorption mechanisms of GaAs on SiO2 surfaces. A model describing the diffusion and desorption of adatoms on the patterned surface is presented. The theoretical considerations are used to determine experimentally the diffusion length and the sticking coefficient of Ga(As) on SiO2 as a function of temperature. The growth results are applied to the fabrication of GaAs-based quantum well microsctructures. Finally, the optical properties of InGaAs and AlGaAs heterostructures were examined by micro-photoluminescence spectroscopy, indicating the good quality of the material deposited by this method.",

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T1 - Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

AU - Heiß, Martin

AU - Riedlberger, Eva

AU - Spirkoska, Danče

AU - Bichler, Max

AU - Abstreiter, Gerhard

AU - Morral, Anna Fontcuberta i.

PY - 2008/3/15

Y1 - 2008/3/15

N2 - Selective deposition of GaAs-based microstructures on a patterned SiO2/GaAs substrate was realized by molecular beam epitaxy. The growth mechanism was investigated experimentally by studying both the diffusion and desorption mechanisms of GaAs on SiO2 surfaces. A model describing the diffusion and desorption of adatoms on the patterned surface is presented. The theoretical considerations are used to determine experimentally the diffusion length and the sticking coefficient of Ga(As) on SiO2 as a function of temperature. The growth results are applied to the fabrication of GaAs-based quantum well microsctructures. Finally, the optical properties of InGaAs and AlGaAs heterostructures were examined by micro-photoluminescence spectroscopy, indicating the good quality of the material deposited by this method.

AB - Selective deposition of GaAs-based microstructures on a patterned SiO2/GaAs substrate was realized by molecular beam epitaxy. The growth mechanism was investigated experimentally by studying both the diffusion and desorption mechanisms of GaAs on SiO2 surfaces. A model describing the diffusion and desorption of adatoms on the patterned surface is presented. The theoretical considerations are used to determine experimentally the diffusion length and the sticking coefficient of Ga(As) on SiO2 as a function of temperature. The growth results are applied to the fabrication of GaAs-based quantum well microsctructures. Finally, the optical properties of InGaAs and AlGaAs heterostructures were examined by micro-photoluminescence spectroscopy, indicating the good quality of the material deposited by this method.

KW - A1. Growth model

KW - A1. Nanowires

KW - A3. Molecular beam epitaxy

KW - A3. Selective area epitaxy

KW - B1. Aluminium arsenide

KW - B1. Indium arsenide

KW - B1. Nanocolumns

KW - B2. Semiconducting gallium arsenide

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DO - 10.1016/j.jcrysgro.2007.12.061

M3 - Article

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SN - 0022-0248

VL - 310

SP - 1049

EP - 1056

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 6

ER -

Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

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Keywords

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