TY - JOUR
T1 - Growth kinetics of GaN thin films grown by OM VPE using single source precursors
AU - Fischer, R. A.
N1 - Funding Information:
The authors thank the Deutsche Forschungsgemeinschaft (DFG) for financial sup-port. A. D. thanks the Alexander von Humboldt foundation, Germany for a fellowship.
PY - 2000
Y1 - 2000
N2 - We report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the a-GaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al20j substrates in the temperature range of 870 - 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spcctroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.
AB - We report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the a-GaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al20j substrates in the temperature range of 870 - 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammonia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spcctroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.
UR - http://www.scopus.com/inward/record.url?scp=33751310810&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:33751310810
SN - 0272-9172
VL - 595
SP - W3181-W3186
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
ER -