Growth conditions of erbium-oxygen-doped silicon grown by MBE

J. Stimmer, A. Reittinger, G. Abstreiter, H. Holzbrecher, Ch Buchal

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

We report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

Original languageEnglish
Pages (from-to)15-20
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume422
DOIs
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 8 Apr 199612 Apr 1996

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