Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

J. F. Nützel, C. M. Engelhardt, R. Wiesner, D. Többen, M. Holzmann, G. Abstreiter

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

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