Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

J. F. Nützel; C. M. Engelhardt; R. Wiesner; D. Többen; M. Holzmann; G. Abstreiter

doi:10.1016/0022-0248(95)80092-Q

Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

J. F. Nützel
, C. M. Engelhardt
, R. Wiesner
, D. Többen
, M. Holzmann
, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

High-mobility two-dimensional hole channels were grown pseudomorphically on Ge substrates and strained on relaxed graded buffers both on Si and for the first time on Ge substrates. Low temperature mobilities of up to 27000 cm²/V · s and effective masses down to 0.12 m₀ are observed for the Ge/SiGe/Ge hole channel.

Original language	English
Pages (from-to)	1011-1014
Number of pages	4
Journal	Journal of Crystal Growth
Volume	150
DOIs	https://doi.org/10.1016/0022-0248(95)80092-Q
State	Published - 1995

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@article{15754e6cb56444e9a037e4b99fb739d8,

title = "Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates",

abstract = "High-mobility two-dimensional hole channels were grown pseudomorphically on Ge substrates and strained on relaxed graded buffers both on Si and for the first time on Ge substrates. Low temperature mobilities of up to 27000 cm2/V · s and effective masses down to 0.12 m0 are observed for the Ge/SiGe/Ge hole channel.",

author = "N{\"u}tzel, \{J. F.\} and Engelhardt, \{C. M.\} and R. Wiesner and D. T{\"o}bben and M. Holzmann and G. Abstreiter",

year = "1995",

doi = "10.1016/0022-0248(95)80092-Q",

language = "English",

volume = "150",

pages = "1011--1014",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

AU - Nützel, J. F.

AU - Engelhardt, C. M.

AU - Wiesner, R.

AU - Többen, D.

AU - Holzmann, M.

AU - Abstreiter, G.

PY - 1995

Y1 - 1995

N2 - High-mobility two-dimensional hole channels were grown pseudomorphically on Ge substrates and strained on relaxed graded buffers both on Si and for the first time on Ge substrates. Low temperature mobilities of up to 27000 cm2/V · s and effective masses down to 0.12 m0 are observed for the Ge/SiGe/Ge hole channel.

AB - High-mobility two-dimensional hole channels were grown pseudomorphically on Ge substrates and strained on relaxed graded buffers both on Si and for the first time on Ge substrates. Low temperature mobilities of up to 27000 cm2/V · s and effective masses down to 0.12 m0 are observed for the Ge/SiGe/Ge hole channel.

UR - https://www.scopus.com/pages/publications/0029309647

U2 - 10.1016/0022-0248(95)80092-Q

DO - 10.1016/0022-0248(95)80092-Q

M3 - Article

AN - SCOPUS:0029309647

SN - 0022-0248

VL - 150

SP - 1011

EP - 1014

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

Abstract

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