Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

J. F. Nützel, C. M. Engelhardt, R. Wiesner, D. Többen, M. Holzmann, G. Abstreiter

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

High-mobility two-dimensional hole channels were grown pseudomorphically on Ge substrates and strained on relaxed graded buffers both on Si and for the first time on Ge substrates. Low temperature mobilities of up to 27000 cm2/V · s and effective masses down to 0.12 m0 are observed for the Ge/SiGe/Ge hole channel.

Original languageEnglish
Pages (from-to)1011-1014
Number of pages4
JournalJournal of Crystal Growth
Volume150
DOIs
StatePublished - 1995

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