Abstract
Growth and morphology of an aluminum (Al) contact on a poly(3- hexylthiophene) (P3HT) thin film are investigated with X-ray methods and related to the interactions at the Al:P3HT interface. Grazing incidence small-angle scattering (GISAXS) is applied in situ during Al sputter deposition to monitor the growth of the layer. A growth mode is found, in which the polymer surface is wetted and rapidly covered with a continuous layer. This growth type results in a homogeneous film without voids and is explained by the strong chemical interaction between Al and P3HT, which suppresses the formation of three-dimensional cluster structures. A corresponding three stage growth model (surface bonding, agglomeration, and layer growth) is derived. X-ray reflectivity shows the penetration of Al atoms into the P3HT film during deposition and the presence of a 2 nm thick intermixing layer at the Al:P3HT interface.
Original language | English |
---|---|
Pages (from-to) | 1055-1062 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 3 |
Issue number | 4 |
DOIs | |
State | Published - 27 Apr 2011 |
Keywords
- GISAXS
- P3HT
- aluminum
- solar cell
- sputtering