Growth and characterization of strained Si_{1 - X}Ge_x multi-quantum-well waveguide photodetectors on (110) Si for 1.3 and 1.55 μm

Keyphrases

• External Quantum Efficiency 100%
• TE Polarization 100%
• Quantum Waveguide 100%
• Si1-xGex 100%
• Waveguide Photodetector 100%
• Multiple Quantum Wells 100%
• Photocurrent 50%
• Waveguide 50%
• Pseudomorphic 50%
• Molecular Beam Epitaxy 50%
• Mole Fraction 50%
• PIN Photodiode 50%
• Absorption Coefficient 50%
• Interband Absorption 50%

Physics

• Photometer 100%
• Waveguide 100%
• Quantum Wells 100%
• Photoelectric Emission 50%
• Photodiode 50%
• Molecular Beam Epitaxy 50%