Growth and characterization of GaN:Mn epitaxial films

T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, L. Görgens, J. B. Philipp, O. Ambacher

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


Electron spin resonance (ESR), elastic recoil detection, superconducting quantum interference device magnetization and photothermal deflection spectroscopy measurements were used to investigate the oxidation states of Mn in epitaxial GaN films grown by plasma induced molecular beam epitaxy. The comparison of the measured Mn2+ spin densities with the total Mn concentrations in GaN show that the majority of the Mn is present in the neutral Mn3+ acceptor state. However, a strong increase of the Mn2+ spin densities in ESR indicate that in samples codoped with Si, electrons are transferred to the Mn acceptors.

Original languageEnglish
Pages (from-to)9697-9702
Number of pages6
JournalJournal of Applied Physics
Issue number12
StatePublished - 15 Jun 2003


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