Group III-nitride-based gas sensors for combustion monitoring

J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, M. Stutzmann

Research output: Contribution to journalArticlepeer-review

87 Scopus citations

Abstract

The paper reports on novel gas-sensing devices based on group III-nitride materials. Both platinum (Pt)-GaN Schottky diodes as well as high-electron-mobility transistors formed from GaN/AlGaN heterostructures with catalytically active platinum gates were investigated. The performance of these devices towards a number of relevant exhaust gas components such as H2, HC, CO, NOx was tested. Test gas concentrations were chosen to simulate exhaust gas emissions from lean-burn 4-stroke petrol engines. We found that GaN-based devices with platinum electrodes are mainly sensitive to hydrogen and unsaturated hydrocarbons with a sizeable cross-sensitivity to CO and NO2. These performance characteristics are similar to those of comparable SiC devices. With GaN devices this performance, however, can be obtained at a reduced complexity of the device processing and a greater freedom in the choice of sensor architectures.

Original languageEnglish
Pages (from-to)207-214
Number of pages8
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume93
Issue number1-3
DOIs
StatePublished - 30 May 2002

Keywords

  • Combustion monitoring
  • GaN
  • GaN/AlGaN-heterostructures
  • Gas sensors

Fingerprint

Dive into the research topics of 'Group III-nitride-based gas sensors for combustion monitoring'. Together they form a unique fingerprint.

Cite this