Gradient etching of silicon-based thin films for depth-resolved measurements: The example of Raman crystallinity

F. Köhler, S. Schicho, B. Wolfrum, A. Gordijn, S. E. Pust, R. Carius

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

An etching procedure was applied to microcrystalline silicon (μc-Si:H) thin films in order to obtain a wedge-shaped profile for depth-resolved characterization. A microfluidic flow cell that merges deionized water with a potassium hydroxide solution (KOH aq) was utilized. The samples consisted of texture-etched ZnO:Al on a Corning Glass substrate, a microcrystalline p-doped layer serving as seed layer and the investigated intrinsic microcrystalline or amorphous silicon (a-Si:H). Along the etched profiles, microscopic Raman spectroscopy was used to estimate the crystalline volume fraction X c for samples deposited with intentionally varied silane concentration to investigate the a-Si:H/μc-Si:H and μc-Si:H/a-Si:H transition.

Original languageEnglish
Pages (from-to)2605-2608
Number of pages4
JournalThin Solid Films
Volume520
Issue number7
DOIs
StatePublished - 31 Jan 2012
Externally publishedYes

Keywords

  • Depth-resolved measurements
  • Etching
  • Microcrystalline silicon
  • Microfluidic devices
  • Microstructure
  • Plasma-enhanced chemical vapor deposition
  • Raman spectroscopy

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