Germanium nanocrystals embedded in sapphire

Q. Xu, I. D. Sharp, C. Y. Liao, D. O. Yi, J. W. Ager, J. W. Beeman, K. M. Yu, D. C. Chrzan, E. E. Haller

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

74Ge nanocrystals are formed in a sapphire matrix by ion implantation followed by thermal annealing. Transmission electron microscopy (TEM) of as-grown samples reveals that the nanocrystals are faceted and have a bi-modal size distribution. Notably, the matrix remains crystalline despite the large implantation dose and corresponding damage. Embedded nanocrystals experience large compressive stress relative to bulk, as measured by Raman spectroscopy of the zone center optical phonon. In contrast, ion-beam-synthesized nanocrystals embedded in silica are observed to be spherical and experience considerably lower stresses. Also, in situ TEM reveals that nanocrystals embedded in sapphire melt very close to the bulk melting point (Tm= 936 %C) whereas those embedded in silica exhibit a significant melting point hysteresis around Tm.

Original languageEnglish
Title of host publicationMechanical Properties of Nanostructured Materials
Subtitle of host publicationExperiments and Modeling
PublisherMaterials Research Society
Pages115-120
Number of pages6
ISBN (Print)1558998349, 9781558998346
DOIs
StatePublished - 2005
Externally publishedYes
Event2005 MRS Spring Meeting - San Franciso, CA, United States
Duration: 28 Mar 20051 Apr 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume880
ISSN (Print)0272-9172

Conference

Conference2005 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Franciso, CA
Period28/03/051/04/05

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