Generation-recombination noise of DX centers in AlN:Si

S. T.B. Goennenwein, R. Zeisel, O. Ambacher, M. S. Brandt, M. Stutzmann, S. Baldovino

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Generation-recombination noise is observed in Si-doped aluminum nitride (AlN:Si). Both the magnitude and the characteristic frequency of the generation-recombination noise power density are found to be thermally activated. Using a model based on charge carrier number fluctuations in a two-level system, transition energies and potential barriers of the DX center formed by Si donors in AlN are quantitatively determined.

Original languageEnglish
Pages (from-to)2396-2398
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number15
DOIs
StatePublished - 8 Oct 2001

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