Gate-Tunable Remnant Anomalous Hall Effect in Dual-‍Proximity Graphene Heterostructures

Monolayer graphene offers long spin coherence but lacks the intrinsic spin–orbit coupling (SOC) and magnetic exchange required to access anomalous Hall and topological transport. Simultaneously proximitizing graphene with a ferromagnet and a spin–orbit-coupled semiconductor can, in principle, unlock responses inaccessible to either single-proximity system, but an experimental demonstration has been missing. Here, we report a gate-tunable, remnant anomalous Hall effect (AHE) in dual-proximity Cr₂Ge₂Te₆/graphene/WSe₂ van der Waals heterostructures. Near charge neutrality, the trilayer exhibits a hysteretic transverse resistance with a remnant offset of up to ΔR_xy ≈ 250 Ω and a characteristic transport reversal field of ~20 mT, corresponding to an anomalous Hall conductivity of order e²/h that changes sign multiple times within a narrow energy window. The hysteresis vanishes above T ≈ 50 K, tracking the Curie temperature of Cr₂Ge₂Te₆, and is absent in Cr₂Ge₂Te₆/graphene bilayer controls. Scaling analysis of σ_xy^AHE versus σ_xx rules out extrinsic skew-scattering and side-jump mechanisms near the Dirac point, while low-energy model calculations reproduce the observed sign structure through Berry-curvature hot spots that emerge only when exchange and SOC act together. Our results establish dual-proximity engineering as a route toward gate-tunable topological phases in graphene.