Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS2van der Waals Heterodevices

Alexander Hötger; Julian Klein; Katja Barthelmi; Lukas Sigl; Florian Sigger; Wolfgang Männer; Samuel Gyger; Matthias Florian; Michael Lorke; Frank Jahnke; Takashi Taniguchi; Kenji Watanabe; Klaus D. Jöns; Ursula Wurstbauer; Christoph Kastl; Kai Müller; Jonathan J. Finley; Alexander W. Holleitner

doi:10.1021/acs.nanolett.0c04222

Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS₂van der Waals Heterodevices

Alexander Hötger, Julian Klein, Katja Barthelmi, Lukas Sigl, Florian Sigger, Wolfgang Männer, Samuel Gyger, Matthias Florian, Michael Lorke, Frank Jahnke, Takashi Taniguchi, Kenji Watanabe, Klaus D. Jöns, Ursula Wurstbauer, Christoph Kastl, Kai Müller, Jonathan J. Finley, Alexander W. Holleitner

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS2 van der Waals heterodevices. We contact monolayers of MoS2 in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom gates. After the assembly of such gate-tunable heterodevices, we demonstrate how arrays of defects, that serve as quantum emitters, can be site-selectively generated in the monolayer MoS2 by focused helium ion irradiation. The SPEs are sensitive to the charge carrier concentration in the MoS2 and switch on and off similar to the neutral exciton in MoS2 for moderate electron doping. The demonstrated scheme is a first step for producing scalable, gate-addressable, and gate-switchable arrays of quantum light emitters in MoS2 heterostacks.

Original language	English
Pages (from-to)	1040-1046
Number of pages	7
Journal	Nano Letters
Volume	21
Issue number	2
DOIs	https://doi.org/10.1021/acs.nanolett.0c04222
State	Published - 27 Jan 2021

Keywords

2D materials
field-effect device
nanoscale optoelectronic devices
single-photon emitters
van der Waals heterostack

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10.1021/acs.nanolett.0c04222

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Hötger, A., Klein, J., Barthelmi, K., Sigl, L., Sigger, F., Männer, W., Gyger, S., Florian, M., Lorke, M., Jahnke, F., Taniguchi, T., Watanabe, K., Jöns, K. D., Wurstbauer, U., Kastl, C., Müller, K., Finley, J. J., & Holleitner, A. W. (2021). Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS₂van der Waals Heterodevices. Nano Letters, 21(2), 1040-1046. https://doi.org/10.1021/acs.nanolett.0c04222

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title = "Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS2van der Waals Heterodevices",

abstract = "We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS2 van der Waals heterodevices. We contact monolayers of MoS2 in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom gates. After the assembly of such gate-tunable heterodevices, we demonstrate how arrays of defects, that serve as quantum emitters, can be site-selectively generated in the monolayer MoS2 by focused helium ion irradiation. The SPEs are sensitive to the charge carrier concentration in the MoS2 and switch on and off similar to the neutral exciton in MoS2 for moderate electron doping. The demonstrated scheme is a first step for producing scalable, gate-addressable, and gate-switchable arrays of quantum light emitters in MoS2 heterostacks.",

keywords = "2D materials, field-effect device, nanoscale optoelectronic devices, single-photon emitters, van der Waals heterostack",

author = "Alexander H{\"o}tger and Julian Klein and Katja Barthelmi and Lukas Sigl and Florian Sigger and Wolfgang M{\"a}nner and Samuel Gyger and Matthias Florian and Michael Lorke and Frank Jahnke and Takashi Taniguchi and Kenji Watanabe and J{\"o}ns, {Klaus D.} and Ursula Wurstbauer and Christoph Kastl and Kai M{\"u}ller and Finley, {Jonathan J.} and Holleitner, {Alexander W.}",

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doi = "10.1021/acs.nanolett.0c04222",

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Hötger, A, Klein, J, Barthelmi, K, Sigl, L, Sigger, F, Männer, W, Gyger, S, Florian, M, Lorke, M, Jahnke, F, Taniguchi, T, Watanabe, K, Jöns, KD, Wurstbauer, U, Kastl, C, Müller, K , Finley, JJ & Holleitner, AW 2021, 'Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS₂van der Waals Heterodevices', Nano Letters, vol. 21, no. 2, pp. 1040-1046. https://doi.org/10.1021/acs.nanolett.0c04222

TY - JOUR

T1 - Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS2van der Waals Heterodevices

AU - Hötger, Alexander

AU - Klein, Julian

AU - Barthelmi, Katja

AU - Sigl, Lukas

AU - Sigger, Florian

AU - Männer, Wolfgang

AU - Gyger, Samuel

AU - Florian, Matthias

AU - Lorke, Michael

AU - Jahnke, Frank

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Jöns, Klaus D.

AU - Wurstbauer, Ursula

AU - Kastl, Christoph

AU - Müller, Kai

AU - Finley, Jonathan J.

AU - Holleitner, Alexander W.

PY - 2021/1/27

Y1 - 2021/1/27

N2 - We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS2 van der Waals heterodevices. We contact monolayers of MoS2 in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom gates. After the assembly of such gate-tunable heterodevices, we demonstrate how arrays of defects, that serve as quantum emitters, can be site-selectively generated in the monolayer MoS2 by focused helium ion irradiation. The SPEs are sensitive to the charge carrier concentration in the MoS2 and switch on and off similar to the neutral exciton in MoS2 for moderate electron doping. The demonstrated scheme is a first step for producing scalable, gate-addressable, and gate-switchable arrays of quantum light emitters in MoS2 heterostacks.

AB - We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS2 van der Waals heterodevices. We contact monolayers of MoS2 in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom gates. After the assembly of such gate-tunable heterodevices, we demonstrate how arrays of defects, that serve as quantum emitters, can be site-selectively generated in the monolayer MoS2 by focused helium ion irradiation. The SPEs are sensitive to the charge carrier concentration in the MoS2 and switch on and off similar to the neutral exciton in MoS2 for moderate electron doping. The demonstrated scheme is a first step for producing scalable, gate-addressable, and gate-switchable arrays of quantum light emitters in MoS2 heterostacks.

KW - 2D materials

KW - field-effect device

KW - nanoscale optoelectronic devices

KW - single-photon emitters

KW - van der Waals heterostack

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M3 - Article

C2 - 33433221

AN - SCOPUS:85100291616

SN - 1530-6984

VL - 21

SP - 1040

EP - 1046

JO - Nano Letters

JF - Nano Letters

IS - 2

ER -

Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS₂van der Waals Heterodevices

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