GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm

Alexander Andrejew, Stephan Sprengel, Markus Christian Amann

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

GaSb-based electrically pumped vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction emitting at 3 μm are demonstrated. To achieve this, a low optical loss VCSEL concept with an undoped epitaxial distributed Bragg reflector and intracavity contact is presented. The devices operate up to 5°C continuous wave and up to 50°C in pulsed mode. Single-mode operation with a side-mode suppression ratio of 30 dB and electro-thermal tuning range of 19.7 nm is achieved.

Original languageEnglish
Pages (from-to)2799-2802
Number of pages4
JournalOptics Letters
Volume41
Issue number12
DOIs
StatePublished - 15 Jun 2016

Fingerprint

Dive into the research topics of 'GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm'. Together they form a unique fingerprint.

Cite this