GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm

Alexander Andrejew; Stephan Sprengel; Markus Christian Amann

doi:10.1364/OL.41.002799

GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm

Alexander Andrejew, Stephan Sprengel, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

GaSb-based electrically pumped vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction emitting at 3 μm are demonstrated. To achieve this, a low optical loss VCSEL concept with an undoped epitaxial distributed Bragg reflector and intracavity contact is presented. The devices operate up to 5°C continuous wave and up to 50°C in pulsed mode. Single-mode operation with a side-mode suppression ratio of 30 dB and electro-thermal tuning range of 19.7 nm is achieved.

Original language	English
Pages (from-to)	2799-2802
Number of pages	4
Journal	Optics Letters
Volume	41
Issue number	12
DOIs	https://doi.org/10.1364/OL.41.002799
State	Published - 15 Jun 2016

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abstract = "GaSb-based electrically pumped vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction emitting at 3 μm are demonstrated. To achieve this, a low optical loss VCSEL concept with an undoped epitaxial distributed Bragg reflector and intracavity contact is presented. The devices operate up to 5°C continuous wave and up to 50°C in pulsed mode. Single-mode operation with a side-mode suppression ratio of 30 dB and electro-thermal tuning range of 19.7 nm is achieved.",

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AU - Andrejew, Alexander

AU - Sprengel, Stephan

AU - Amann, Markus Christian

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Y1 - 2016/6/15

N2 - GaSb-based electrically pumped vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction emitting at 3 μm are demonstrated. To achieve this, a low optical loss VCSEL concept with an undoped epitaxial distributed Bragg reflector and intracavity contact is presented. The devices operate up to 5°C continuous wave and up to 50°C in pulsed mode. Single-mode operation with a side-mode suppression ratio of 30 dB and electro-thermal tuning range of 19.7 nm is achieved.

AB - GaSb-based electrically pumped vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction emitting at 3 μm are demonstrated. To achieve this, a low optical loss VCSEL concept with an undoped epitaxial distributed Bragg reflector and intracavity contact is presented. The devices operate up to 5°C continuous wave and up to 50°C in pulsed mode. Single-mode operation with a side-mode suppression ratio of 30 dB and electro-thermal tuning range of 19.7 nm is achieved.

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ER -

GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm

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