GaSb-based VCSEL with buried tunnel junction for emission around 2.3 μm

Alexander Bachmann; Kaveh Kashani-Shirazi; Shamsul Arafin; Markus Christian Amann

doi:10.1109/JSTQE.2009.2013361

GaSb-based VCSEL with buried tunnel junction for emission around 2.3 μm

Alexander Bachmann, Kaveh Kashani-Shirazi, Shamsul Arafin, Markus Christian Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

In this paper, we present a device concept and results of an electrically pumped vertical-cavity surface-emitting laser in the (AlGaIn)(AsSb) material system grown on GaSb substrate. The structure consists of an n-doped GaSb/AlAsSb distributed Bragg reflector and a type-I GaInAsSb/AlGaAsSb active region, and incorporates a type-III p⁺-GaSb/n⁺-InAsSb buried tunnel junction for current as well as optical confinement. Continuous-wave operation up to 75 °C has been achieved at a wavelength of 2.3 μm. The mid-IR emission, the large tunability over a wavelength range of more than 10 nm combined with its single-mode operation makes this device ideally suited for gas-sensing applications.

Original language	English
Article number	4840372
Pages (from-to)	933-940
Number of pages	8
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	15
Issue number	3
DOIs	https://doi.org/10.1109/JSTQE.2009.2013361
State	Published - May 2009

Keywords

GaSb
Semiconductor lasers
Tunable diode laser absorption spectroscopy
Vertical-cavity surface-emitting laser (VCSEL)

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10.1109/JSTQE.2009.2013361

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title = "GaSb-based VCSEL with buried tunnel junction for emission around 2.3 μm",

abstract = "In this paper, we present a device concept and results of an electrically pumped vertical-cavity surface-emitting laser in the (AlGaIn)(AsSb) material system grown on GaSb substrate. The structure consists of an n-doped GaSb/AlAsSb distributed Bragg reflector and a type-I GaInAsSb/AlGaAsSb active region, and incorporates a type-III p+-GaSb/n+-InAsSb buried tunnel junction for current as well as optical confinement. Continuous-wave operation up to 75 °C has been achieved at a wavelength of 2.3 μm. The mid-IR emission, the large tunability over a wavelength range of more than 10 nm combined with its single-mode operation makes this device ideally suited for gas-sensing applications.",

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AU - Kashani-Shirazi, Kaveh

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AB - In this paper, we present a device concept and results of an electrically pumped vertical-cavity surface-emitting laser in the (AlGaIn)(AsSb) material system grown on GaSb substrate. The structure consists of an n-doped GaSb/AlAsSb distributed Bragg reflector and a type-I GaInAsSb/AlGaAsSb active region, and incorporates a type-III p+-GaSb/n+-InAsSb buried tunnel junction for current as well as optical confinement. Continuous-wave operation up to 75 °C has been achieved at a wavelength of 2.3 μm. The mid-IR emission, the large tunability over a wavelength range of more than 10 nm combined with its single-mode operation makes this device ideally suited for gas-sensing applications.

KW - GaSb

KW - Semiconductor lasers

KW - Tunable diode laser absorption spectroscopy

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GaSb-based VCSEL with buried tunnel junction for emission around 2.3 μm

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