GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C

A. Bachmann; K. Kashani-Shirazi; M. C. Amann

doi:10.1109/ISLC.2008.4635998

GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C

A. Bachmann, K. Kashani-Shirazi, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

2.33 μm electrically pumped GaSb-based VCSELs with low threshold currents, continuous-wave and single-mode operation up to 50°C are presented. The devices are (electro-) thermally tunable over 10nm.

Original language	English
Title of host publication	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Pages	39-40
Number of pages	2
DOIs	https://doi.org/10.1109/ISLC.2008.4635998
State	Published - 2008
Event	21st IEEE International Semiconductor Laser Conference, ISLC 2008 - Sorrento, Italy Duration: 14 Sep 2008 → 18 Sep 2008

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Country/Territory	Italy
City	Sorrento
Period	14/09/08 → 18/09/08

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10.1109/ISLC.2008.4635998

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Bachmann, A., Kashani-Shirazi, K., & Amann, M. C. (2008). GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C. In 21st IEEE International Semiconductor Laser Conference, ISLC 2008 (pp. 39-40). Article 4635998 (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2008.4635998

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title = "GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C",

abstract = "2.33 μm electrically pumped GaSb-based VCSELs with low threshold currents, continuous-wave and single-mode operation up to 50°C are presented. The devices are (electro-) thermally tunable over 10nm.",

author = "A. Bachmann and K. Kashani-Shirazi and Amann, {M. C.}",

year = "2008",

doi = "10.1109/ISLC.2008.4635998",

language = "English",

isbn = "9781424417834",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

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note = "21st IEEE International Semiconductor Laser Conference, ISLC 2008 ; Conference date: 14-09-2008 Through 18-09-2008",

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Bachmann, A, Kashani-Shirazi, K & Amann, MC 2008, GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C. in 21st IEEE International Semiconductor Laser Conference, ISLC 2008., 4635998, Conference Digest - IEEE International Semiconductor Laser Conference, pp. 39-40, 21st IEEE International Semiconductor Laser Conference, ISLC 2008, Sorrento, Italy, 14/09/08. https://doi.org/10.1109/ISLC.2008.4635998

GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C. / Bachmann, A.; Kashani-Shirazi, K.; Amann, M. C.
21st IEEE International Semiconductor Laser Conference, ISLC 2008. 2008. p. 39-40 4635998 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C

AU - Bachmann, A.

AU - Kashani-Shirazi, K.

AU - Amann, M. C.

PY - 2008

Y1 - 2008

N2 - 2.33 μm electrically pumped GaSb-based VCSELs with low threshold currents, continuous-wave and single-mode operation up to 50°C are presented. The devices are (electro-) thermally tunable over 10nm.

AB - 2.33 μm electrically pumped GaSb-based VCSELs with low threshold currents, continuous-wave and single-mode operation up to 50°C are presented. The devices are (electro-) thermally tunable over 10nm.

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DO - 10.1109/ISLC.2008.4635998

M3 - Conference contribution

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SN - 9781424417834

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 39

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BT - 21st IEEE International Semiconductor Laser Conference, ISLC 2008

T2 - 21st IEEE International Semiconductor Laser Conference, ISLC 2008

Y2 - 14 September 2008 through 18 September 2008

ER -

GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C

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