GaSb-based electrically pumped VCSEL with buried tunnel junction operating continuous wave up to 50°C

A. Bachmann, K. Kashani-Shirazi, M. C. Amann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

2.33 μm electrically pumped GaSb-based VCSELs with low threshold currents, continuous-wave and single-mode operation up to 50°C are presented. The devices are (electro-) thermally tunable over 10nm.

Original languageEnglish
Title of host publication21st IEEE International Semiconductor Laser Conference, ISLC 2008
Pages39-40
Number of pages2
DOIs
StatePublished - 2008
Event21st IEEE International Semiconductor Laser Conference, ISLC 2008 - Sorrento, Italy
Duration: 14 Sep 200818 Sep 2008

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Conference

Conference21st IEEE International Semiconductor Laser Conference, ISLC 2008
Country/TerritoryItaly
CitySorrento
Period14/09/0818/09/08

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