GaN/AlN axial multi quantum well nanowires for optoelectronic devices

S. Conesa-Boj, J. Arbiol, F. Furtmayr, C. Stark, S. Scḧfer, M. Stutzmann, M. Eickhoff, F. Peiró, J. R. Morante

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

III-nitride based Quantum Wells (QWs) have been extensively studied as active buildings blocks for different electronic and optoelectronic devices. Several samples of GaN/AlN Axial Multi Quantum Well nanowires (MQW NWs) have been synthesized, leading to NWs with a MQW structure with GaN wells of different widths along the growth axis, 1.5, 2, 3 and 4 nm. In this work structural and optical properties are studied by means of high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) analysis respectively.

Original languageEnglish
Title of host publicationProceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
Pages61-64
Number of pages4
DOIs
StatePublished - 2009
Event2009 Spanish Conference on Electron Devices, CDE'09 - Santiago de Compostela, Spain
Duration: 11 Feb 200913 Feb 2009

Publication series

NameProceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

Conference

Conference2009 Spanish Conference on Electron Devices, CDE'09
Country/TerritorySpain
CitySantiago de Compostela
Period11/02/0913/02/09

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