Gallium interstitials in GaAs/AlGaAs heterosructures investigated by optically and electrically detected magnetic resonance

T. Wimbauer; M. S. Brandt; M. W. Bayerl; M. Stutzmann; D. M. Hofmann; Y. Mochizuki; M. Mizuta

Gallium interstitials in GaAs/AlGaAs heterosructures investigated by optically and electrically detected magnetic resonance

T. Wimbauer, M. S. Brandt, M. W. Bayerl, M. Stutzmann, D. M. Hofmann, Y. Mochizuki, M. Mizuta

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have performed a comparative optically and electrically detected magnetic resonance study (ODMR and EDMR) on GaAs/AlGaAs heterostructures containing a 50 nm GaAs quantum-well codoped with Si and Be. The donor-acceptor-pair recombination serves as a sensitive detection channel for the ODMR experiments and reveals the presence of Ga interstitials in the GaAs quantum well. The signals observed in EDMR depend sensitively on the chosen experimental conditions. Dependent on the localization of the recombination current in the heterostructure, two cases can be distinguished. Cr⁴⁺ as well as arsenic antisite defects are observed for conditions where the current is dominantly driven through the semiinsulating substrate, whereas Ga interstitials were detected for conditions including a recombination current in the quantum well. These results indicate the large potential of EDMR in view of a selective detection of defects in complicated sample structures.

Original language	English
Pages (from-to)	1309-1314
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	9993
State	Published - 1997

Keywords

GaAs
Optically and electrically detected magnetic resonance

Cite this

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title = "Gallium interstitials in GaAs/AlGaAs heterosructures investigated by optically and electrically detected magnetic resonance",

abstract = "We have performed a comparative optically and electrically detected magnetic resonance study (ODMR and EDMR) on GaAs/AlGaAs heterostructures containing a 50 nm GaAs quantum-well codoped with Si and Be. The donor-acceptor-pair recombination serves as a sensitive detection channel for the ODMR experiments and reveals the presence of Ga interstitials in the GaAs quantum well. The signals observed in EDMR depend sensitively on the chosen experimental conditions. Dependent on the localization of the recombination current in the heterostructure, two cases can be distinguished. Cr4+ as well as arsenic antisite defects are observed for conditions where the current is dominantly driven through the semiinsulating substrate, whereas Ga interstitials were detected for conditions including a recombination current in the quantum well. These results indicate the large potential of EDMR in view of a selective detection of defects in complicated sample structures.",

keywords = "GaAs, Optically and electrically detected magnetic resonance",

author = "T. Wimbauer and Brandt, {M. S.} and Bayerl, {M. W.} and M. Stutzmann and Hofmann, {D. M.} and Y. Mochizuki and M. Mizuta",

year = "1997",

language = "English",

volume = "258-263",

pages = "1309--1314",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "9993",

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TY - JOUR

T1 - Gallium interstitials in GaAs/AlGaAs heterosructures investigated by optically and electrically detected magnetic resonance

AU - Wimbauer, T.

AU - Brandt, M. S.

AU - Bayerl, M. W.

AU - Stutzmann, M.

AU - Hofmann, D. M.

AU - Mochizuki, Y.

AU - Mizuta, M.

PY - 1997

Y1 - 1997

N2 - We have performed a comparative optically and electrically detected magnetic resonance study (ODMR and EDMR) on GaAs/AlGaAs heterostructures containing a 50 nm GaAs quantum-well codoped with Si and Be. The donor-acceptor-pair recombination serves as a sensitive detection channel for the ODMR experiments and reveals the presence of Ga interstitials in the GaAs quantum well. The signals observed in EDMR depend sensitively on the chosen experimental conditions. Dependent on the localization of the recombination current in the heterostructure, two cases can be distinguished. Cr4+ as well as arsenic antisite defects are observed for conditions where the current is dominantly driven through the semiinsulating substrate, whereas Ga interstitials were detected for conditions including a recombination current in the quantum well. These results indicate the large potential of EDMR in view of a selective detection of defects in complicated sample structures.

AB - We have performed a comparative optically and electrically detected magnetic resonance study (ODMR and EDMR) on GaAs/AlGaAs heterostructures containing a 50 nm GaAs quantum-well codoped with Si and Be. The donor-acceptor-pair recombination serves as a sensitive detection channel for the ODMR experiments and reveals the presence of Ga interstitials in the GaAs quantum well. The signals observed in EDMR depend sensitively on the chosen experimental conditions. Dependent on the localization of the recombination current in the heterostructure, two cases can be distinguished. Cr4+ as well as arsenic antisite defects are observed for conditions where the current is dominantly driven through the semiinsulating substrate, whereas Ga interstitials were detected for conditions including a recombination current in the quantum well. These results indicate the large potential of EDMR in view of a selective detection of defects in complicated sample structures.

KW - GaAs

KW - Optically and electrically detected magnetic resonance

UR - http://www.scopus.com/inward/record.url?scp=0031374074&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031374074

SN - 0255-5476

VL - 258-263

SP - 1309

EP - 1314

JO - Materials Science Forum

JF - Materials Science Forum

IS - 9993

ER -

Gallium interstitials in GaAs/AlGaAs heterosructures investigated by optically and electrically detected magnetic resonance

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