GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm

M. Grau; C. Lin; O. Dier; M. C. Amann

doi:10.1016/j.physe.2003.08.068

GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm

M. Grau, C. Lin, O. Dier, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Compressively strained multiple quantum well lasers in the GaInAsSb/AlGaAsSb material system are reported. Indium concentrations between 40% and 47.5% were chosen for the GaInAsSb quantum wells. Compressive strains varied between 1.16% and 1.43%. The lasers worked continuous wave at room temperature up to a wavelength of 2.81 μm. For a laser with 2.93 μm wavelength continuous wave operation was found up to a temperature of -23°C. This laser worked in pulsed operation at 15°C.

Original language	English
Pages (from-to)	507-510
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	20
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physe.2003.08.068
State	Published - Jan 2004
Event	Proceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States Duration: 16 Jun 2003 → 20 Jun 2003

Keywords

Antimonide-based lasers
Mid-infrared lasers

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10.1016/j.physe.2003.08.068

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title = "GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm",

abstract = "Compressively strained multiple quantum well lasers in the GaInAsSb/AlGaAsSb material system are reported. Indium concentrations between 40% and 47.5% were chosen for the GaInAsSb quantum wells. Compressive strains varied between 1.16% and 1.43%. The lasers worked continuous wave at room temperature up to a wavelength of 2.81 μm. For a laser with 2.93 μm wavelength continuous wave operation was found up to a temperature of -23°C. This laser worked in pulsed operation at 15°C.",

keywords = "Antimonide-based lasers, Mid-infrared lasers",

author = "M. Grau and C. Lin and O. Dier and Amann, {M. C.}",

year = "2004",

month = jan,

doi = "10.1016/j.physe.2003.08.068",

language = "English",

volume = "20",

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journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "3-4",

note = "Proceedings of the 11th International Conference on Narrow Gap ; Conference date: 16-06-2003 Through 20-06-2003",

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TY - JOUR

T1 - GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm

AU - Grau, M.

AU - Lin, C.

AU - Dier, O.

AU - Amann, M. C.

PY - 2004/1

Y1 - 2004/1

N2 - Compressively strained multiple quantum well lasers in the GaInAsSb/AlGaAsSb material system are reported. Indium concentrations between 40% and 47.5% were chosen for the GaInAsSb quantum wells. Compressive strains varied between 1.16% and 1.43%. The lasers worked continuous wave at room temperature up to a wavelength of 2.81 μm. For a laser with 2.93 μm wavelength continuous wave operation was found up to a temperature of -23°C. This laser worked in pulsed operation at 15°C.

AB - Compressively strained multiple quantum well lasers in the GaInAsSb/AlGaAsSb material system are reported. Indium concentrations between 40% and 47.5% were chosen for the GaInAsSb quantum wells. Compressive strains varied between 1.16% and 1.43%. The lasers worked continuous wave at room temperature up to a wavelength of 2.81 μm. For a laser with 2.93 μm wavelength continuous wave operation was found up to a temperature of -23°C. This laser worked in pulsed operation at 15°C.

KW - Antimonide-based lasers

KW - Mid-infrared lasers

UR - http://www.scopus.com/inward/record.url?scp=0347128569&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2003.08.068

DO - 10.1016/j.physe.2003.08.068

M3 - Conference article

AN - SCOPUS:0347128569

SN - 1386-9477

VL - 20

SP - 507

EP - 510

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3-4

T2 - Proceedings of the 11th International Conference on Narrow Gap

Y2 - 16 June 2003 through 20 June 2003

ER -

GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm

Abstract

Keywords

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