Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure

A. B. Ikyo, I. P. Marko, A. R. Adams, S. J. Sweeney, A. Bachmann, K. Kashani-Shirazi, M. C. Amann

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

High-pressure techniques are used to investigate and optimise the design of GaInAsSb/AlGaAsSb vertical cavity surface emitting lasers (VCSELs) emitting at 2.4μm. From measurements on edge emitting lasers it is found that non-radiative Auger recombination accounts for up to 85 of the threshold current at room temperature (RT) and is responsible for their strong temperature sensitivity. The effect of Auger recombination in VCSELs may be mitigated through judicious design of the gain peak-cavity mode (CM) alignment which may be investigated using high pressure. Results show that temperature insensitivity over the range -10 to +30°C may be obtained around RT if the gain peak is offset by approximately 10meV higher in energy from the VCSEL CM.

Original languageEnglish
Pages (from-to)305-309
Number of pages5
JournalIET Optoelectronics
Volume3
Issue number6
DOIs
StatePublished - 2009

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