Gain characteristics of self-assembled InAs/GaAs quantum dots

M. Arzberger; G. Böhm; M. C. Amann; G. Abstreiter

doi:10.1002/(SICI)1521-3951(200104)224:3<827::AID-PSSB827>3.0.CO;2-5

Gain characteristics of self-assembled InAs/GaAs quantum dots

M. Arzberger, G. Böhm, M. C. Amann, G. Abstreiter

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The gain characteristics of stacked self-assembled InAs/GaAs quantum dots (QDs) with an inhomogeneous broadening of the order of 100 meV are studied in comparison to an InGaAs quantum well. The QDs exhibit gain already at low current densities of ≃25 Acm^-2 per QD layer, but the peak gain rises slowly with increasing current density. The energy of the peak gain is shifted from the low energy tail of the QD emission at low injection towards the wetting-layer at high injection.

Original language	English
Pages (from-to)	827-831
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	224
Issue number	3
DOIs	https://doi.org/10.1002/(SICI)1521-3951(200104)224:3<827::AID-PSSB827>3.0.CO;2-5
State	Published - Apr 2001

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10.1002/(SICI)1521-3951(200104)224:3<827::AID-PSSB827>3.0.CO;2-5

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abstract = "The gain characteristics of stacked self-assembled InAs/GaAs quantum dots (QDs) with an inhomogeneous broadening of the order of 100 meV are studied in comparison to an InGaAs quantum well. The QDs exhibit gain already at low current densities of ≃25 Acm-2 per QD layer, but the peak gain rises slowly with increasing current density. The energy of the peak gain is shifted from the low energy tail of the QD emission at low injection towards the wetting-layer at high injection.",

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AU - Böhm, G.

AU - Amann, M. C.

AU - Abstreiter, G.

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N2 - The gain characteristics of stacked self-assembled InAs/GaAs quantum dots (QDs) with an inhomogeneous broadening of the order of 100 meV are studied in comparison to an InGaAs quantum well. The QDs exhibit gain already at low current densities of ≃25 Acm-2 per QD layer, but the peak gain rises slowly with increasing current density. The energy of the peak gain is shifted from the low energy tail of the QD emission at low injection towards the wetting-layer at high injection.

AB - The gain characteristics of stacked self-assembled InAs/GaAs quantum dots (QDs) with an inhomogeneous broadening of the order of 100 meV are studied in comparison to an InGaAs quantum well. The QDs exhibit gain already at low current densities of ≃25 Acm-2 per QD layer, but the peak gain rises slowly with increasing current density. The energy of the peak gain is shifted from the low energy tail of the QD emission at low injection towards the wetting-layer at high injection.

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

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Gain characteristics of self-assembled InAs/GaAs quantum dots

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