GaAs-AlGaAs core-shell nanowire lasers on silicon: Invited review

Gregor Koblmüller, Benedikt Mayer, Thomas Stettner, Gerhard Abstreiter, Jonathan J. Finley

Research output: Contribution to journalReview articlepeer-review

54 Scopus citations


Semiconductor nanowire (NW) lasers provide significant potential to create a new generation of lasers and on-chip coherent light sources by virtue of their ability to operate as single mode optical waveguides at the nanoscale. Due to their unique geometry, a major benefit lies also in the feasibility for direct integration on silicon (Si), enabling III-V-on-Si NW lasers that could fuel applications in optical interconnects and data communication. In this review, we describe the state-of-the-art and recent progress in GaAs-AlGaAs based NW lasers emitting in the near infrared (NIR) spectral region, with a specific emphasis on integration on a Si platform. First, we explore design rules for the photonic properties in GaAs NW waveguides based on finite difference time domain calculations. The lasing characteristics of GaAs-AlGaAs core-shell NW lasers are then investigated under various different optical pumping schemes ranging from pulsed to continuous wave excitation. We further review recent activities on the realization of low-dimensional quantum heterostructures inside NW cavities as a means to tune lasing wavelength, gain and threshold properties. Ultimately, we describe schemes for monolithic integration of GaAs-based NW lasers directly on Si and show how such vertical nanocavity lasers are excellent candidates for low-threshold lasing, high spontaneous emission coupling (high β-factor lasers), and ultrafast emission characteristics.

Original languageEnglish
Article number053001
JournalSemiconductor Science and Technology
Issue number5
StatePublished - 4 Apr 2017


  • III-V semiconductor nanowires
  • monolithic integration on Si
  • nanolasers
  • optical pumping
  • ultrafast gain dynamics


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