Fully scalable gain memory cell for future drams

W. H. Krautschneider; L. Risch; K. Lau; D. Schmitt-Landsiedel

Fully scalable gain memory cell for future drams

W. H. Krautschneider, L. Risch, K. Lau, D. Schmitt-Landsiedel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A dynamic memory cell is described in which charge is stored on the gate capacitance of a MOS transistor rather than on a discrete capacitor. This transistor is used as an amplifying device, so that the output charge is much greater than the charge stored in the cell. The memory cell can be scaled down without performance loss.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	M. Ilegems, M. Dutoit
Publisher	IEEE Computer Society
Pages	367-370
Number of pages	4
ISBN (Electronic)	0444890661
State	Published - 1991
Externally published	Yes
Event	21st European Solid State Device Research Conference, ESSDERC 1991 - Montreux, Switzerland Duration: 16 Sep 1991 → 19 Sep 1991

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	21st European Solid State Device Research Conference, ESSDERC 1991
Country/Territory	Switzerland
City	Montreux
Period	16/09/91 → 19/09/91

Cite this

@inproceedings{fe9606b18c33428eb5eec5d7c841808a,

title = "Fully scalable gain memory cell for future drams",

abstract = "A dynamic memory cell is described in which charge is stored on the gate capacitance of a MOS transistor rather than on a discrete capacitor. This transistor is used as an amplifying device, so that the output charge is much greater than the charge stored in the cell. The memory cell can be scaled down without performance loss.",

author = "Krautschneider, {W. H.} and L. Risch and K. Lau and D. Schmitt-Landsiedel",

note = "Publisher Copyright: {\textcopyright} 1991 Elsevier Science Publishers B.V. All rights reserved.; 21st European Solid State Device Research Conference, ESSDERC 1991 ; Conference date: 16-09-1991 Through 19-09-1991",

year = "1991",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "367--370",

editor = "M. Ilegems and M. Dutoit",

booktitle = "European Solid-State Device Research Conference",

}

Krautschneider, WH, Risch, L, Lau, K & Schmitt-Landsiedel, D 1991, Fully scalable gain memory cell for future drams. in M Ilegems & M Dutoit (eds), European Solid-State Device Research Conference., 5435307, European Solid-State Device Research Conference, IEEE Computer Society, pp. 367-370, 21st European Solid State Device Research Conference, ESSDERC 1991, Montreux, Switzerland, 16/09/91.

Fully scalable gain memory cell for future drams. / Krautschneider, W. H.; Risch, L.; Lau, K. et al.
European Solid-State Device Research Conference. ed. / M. Ilegems; M. Dutoit. IEEE Computer Society, 1991. p. 367-370 5435307 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fully scalable gain memory cell for future drams

AU - Krautschneider, W. H.

AU - Risch, L.

AU - Lau, K.

AU - Schmitt-Landsiedel, D.

PY - 1991

Y1 - 1991

N2 - A dynamic memory cell is described in which charge is stored on the gate capacitance of a MOS transistor rather than on a discrete capacitor. This transistor is used as an amplifying device, so that the output charge is much greater than the charge stored in the cell. The memory cell can be scaled down without performance loss.

AB - A dynamic memory cell is described in which charge is stored on the gate capacitance of a MOS transistor rather than on a discrete capacitor. This transistor is used as an amplifying device, so that the output charge is much greater than the charge stored in the cell. The memory cell can be scaled down without performance loss.

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M3 - Conference contribution

AN - SCOPUS:84907714342

T3 - European Solid-State Device Research Conference

SP - 367

EP - 370

BT - European Solid-State Device Research Conference

A2 - Ilegems, M.

A2 - Dutoit, M.

PB - IEEE Computer Society

T2 - 21st European Solid State Device Research Conference, ESSDERC 1991

Y2 - 16 September 1991 through 19 September 1991

ER -

Fully scalable gain memory cell for future drams

Abstract

Publication series

Conference

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Cite this