Fully depleted nanowire field-effect transistor in inversion mode

Oliver Hayden; Mikael T. Björk; Heinz Schmid; Heike Riel; Ute Drechsler; Siegfried F. Karg; Emanuel Lörtscher; Walter Riess

doi:10.1002/smll.200600325

Fully depleted nanowire field-effect transistor in inversion mode

Oliver Hayden, Mikael T. Björk, Heinz Schmid, Heike Riel, Ute Drechsler, Siegfried F. Karg, Emanuel Lörtscher, Walter Riess

IBM Zurich Research Laboratory

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

Fully depleted lateral n-channel MOSFET were fabricated with intrinsic nanowires (NW) grown by the vapor-liquid-solid (VLS) growth mechanisms. The NW were dispersed in ethanol after brief ultrasonication and filtrated through a 3-μ membrane filter to remove particulate material. The use of the silane with multiple amino functionalities improved the yield of aligned NWs over that obtained by using silanes with monoamino groups. Strong inversion and clear saturation currents were observed in FET from intrinsic NWs with P-implanted source/drain regions while NWFETs with Schottky contacts only operate in accumulation mode. The analysis revealed strong influence of the electrostatics on the transport properties and extracted values. NWFETs operating in inversion mode allowed the probing of the influence of surface scattering on the FET characteristics with higher fidelity than NW devices working in the accumulation/depletion mode.

Original language	English
Pages (from-to)	230-234
Number of pages	5
Journal	Small
Volume	3
Issue number	2
DOIs	https://doi.org/10.1002/smll.200600325
State	Published - Feb 2007
Externally published	Yes

Keywords

Field-effect transistors
Nanotechnology
Nanowires
Silicon

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10.1002/smll.200600325

Cite this

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title = "Fully depleted nanowire field-effect transistor in inversion mode",

abstract = "Fully depleted lateral n-channel MOSFET were fabricated with intrinsic nanowires (NW) grown by the vapor-liquid-solid (VLS) growth mechanisms. The NW were dispersed in ethanol after brief ultrasonication and filtrated through a 3-μ membrane filter to remove particulate material. The use of the silane with multiple amino functionalities improved the yield of aligned NWs over that obtained by using silanes with monoamino groups. Strong inversion and clear saturation currents were observed in FET from intrinsic NWs with P-implanted source/drain regions while NWFETs with Schottky contacts only operate in accumulation mode. The analysis revealed strong influence of the electrostatics on the transport properties and extracted values. NWFETs operating in inversion mode allowed the probing of the influence of surface scattering on the FET characteristics with higher fidelity than NW devices working in the accumulation/depletion mode.",

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AU - Hayden, Oliver

AU - Björk, Mikael T.

AU - Schmid, Heinz

AU - Riel, Heike

AU - Drechsler, Ute

AU - Karg, Siegfried F.

AU - Lörtscher, Emanuel

AU - Riess, Walter

PY - 2007/2

Y1 - 2007/2

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AB - Fully depleted lateral n-channel MOSFET were fabricated with intrinsic nanowires (NW) grown by the vapor-liquid-solid (VLS) growth mechanisms. The NW were dispersed in ethanol after brief ultrasonication and filtrated through a 3-μ membrane filter to remove particulate material. The use of the silane with multiple amino functionalities improved the yield of aligned NWs over that obtained by using silanes with monoamino groups. Strong inversion and clear saturation currents were observed in FET from intrinsic NWs with P-implanted source/drain regions while NWFETs with Schottky contacts only operate in accumulation mode. The analysis revealed strong influence of the electrostatics on the transport properties and extracted values. NWFETs operating in inversion mode allowed the probing of the influence of surface scattering on the FET characteristics with higher fidelity than NW devices working in the accumulation/depletion mode.

KW - Field-effect transistors

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Fully depleted nanowire field-effect transistor in inversion mode

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Keywords

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