Abstract
The growth of thin epitaxial CaSi2 films with reactive deposition epitaxy (RDE) on different crystalline silicon surfaces is described. The structure and crystalline quality are studied using transmission and scanning electron microscopy as well as X-ray diffraction. Films on (1 1 1)-Si and (1 1 0)-Si in general consist of a mixture of the tr3 and tr6 modifications of CaSi2 and show similar crystalline quality. Epitaxial films of siloxene on (1 1 1)-Si are obtained via topochemical transformation of the corresponding CaSi2 films. X-ray diffraction measurements of siloxene from pure tr6 CaSi2 show that siloxene is also present in a tr6 modification.
Original language | English |
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Pages (from-to) | 570-581 |
Number of pages | 12 |
Journal | Journal of Crystal Growth |
Volume | 203 |
Issue number | 4 |
DOIs | |
State | Published - Jun 1999 |