Free-standing HVPE-GaN layers

H. Larsson, D. Gogova, A. Kasic, R. Yakimova, B. Monemar, C. R. Miskys, M. Stutzmann

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


We have grown GaN layers with a thickness up to 340 μm in an rf-heated vertical HVPE reactor with a bottom-fed design. The GaN layers were separated from the sapphire substrate by a LLO process. The free-standing GaN was investigated by HRXRD, AFM and low temperature CL. The FWHM values of the ω-scans are 96 and 129 arcsec for the (104) and (002) reflection, respectively, which indicates high crystalline quality. The c and a lattice parameters are determined as c = 0.51850 ± 0.00004 nm and a = 0.31890 ± 0.00004 nm, indicating stress free material. The etch pit density was estimated to be 1 × 107 cm-2. The used HVPE growth procedure together with the subsequent LLO are obviously capable to provide high-quality free-standing GaN material for further epitaxial overgrowth.

Original languageEnglish
Pages (from-to)1985-1988
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
StatePublished - 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 25 May 200330 May 2003


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